Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/35960Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHAKRABORTY, Tanmoy | - |
| dc.contributor.author | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
| dc.contributor.author | Srinivasu, K. | - |
| dc.contributor.author | Nongjai, R. | - |
| dc.contributor.author | Asokan, K. | - |
| dc.contributor.author | Chen, C.H. | - |
| dc.contributor.author | Niu, H. | - |
| dc.contributor.author | HAENEN, Ken | - |
| dc.date.accessioned | 2021-11-30T12:10:38Z | - |
| dc.date.available | 2021-11-30T12:10:38Z | - |
| dc.date.issued | 2021 | - |
| dc.date.submitted | 2021-10-28T11:53:46Z | - |
| dc.identifier.citation | Diamond and Related Materials, 120 , (Art N° 108587) | - |
| dc.identifier.uri | http://hdl.handle.net/1942/35960 | - |
| dc.description.abstract | Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the preparation procedure to generate the defect centers in controlled fashion, and to explore new defect centers which can have the potential to overcome the current technological challenges. Through this work we report enhancing the concentration of Ge and Xe vacancy centers in microcrystalline diamond (MCD) by means of He+ irradiation. We have demonstrated controlled growth of MCD by chemical vapor deposition (CVD) and implantation of Ge and Xe ions into the CVD-grown samples. MCDs were irradiated with He+ ions and characterized through optical spectroscopy measurements. Recorded photoluminescence results revealed a clear signature of enhancement of the Xe-related and Ge vacancies in MCDs. | - |
| dc.description.sponsorship | This work was financially supported by the Methusalem NANO network and the Research Foundation Flanders (FWO) via SBO-project S004018N and the Special Research Fund (BOF) Postdoctoral Fellowship of KJS. We thank Milos Nesladek for his insightful suggestions. We also thank IUAC staff for their support in ion implantations. | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.rights | 2021 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). | - |
| dc.subject.other | Synthetic diamond | - |
| dc.subject.other | Nanodiamonds | - |
| dc.subject.other | Chemical vapor deposition | - |
| dc.subject.other | Optical spectroscopyIon implantation | - |
| dc.subject.other | Raman spectroscopy | - |
| dc.title | Enhancement of concentration of XeV and GeV centers in microcrystalline diamond films through He+ irradiation | - |
| dc.type | Journal Contribution | - |
| dc.identifier.volume | 120 | - |
| local.format.pages | 7 | - |
| local.bibliographicCitation.jcat | A1 | - |
| dc.description.notes | Chakraborty, T (corresponding author), Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands.; Chakraborty, T (corresponding author), Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands. | - |
| dc.description.notes | t.chakraborty-1@tudelft.nl | - |
| local.publisher.place | PO BOX 564, 1001 LAUSANNE, SWITZERLAND | - |
| local.type.refereed | Refereed | - |
| local.type.specified | Article | - |
| local.bibliographicCitation.artnr | 108587 | - |
| dc.identifier.doi | 10.1016/j.diamond.2021.108587 | - |
| dc.identifier.isi | WOS:000703159800007 | - |
| local.provider.type | wosris | - |
| local.uhasselt.uhpub | yes | - |
| local.description.affiliation | [Chakraborty, T.; Sankaran, K. J.; Haenen, K.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. | - |
| local.description.affiliation | [Chakraborty, T.; Sankaran, K. J.; Haenen, K.] IMEC VZW, IMOMEC, B-3590 Diepenbeek, Belgium. | - |
| local.description.affiliation | [Srinivasu, K.; Chen, C. H.; Niu, H.] Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Accelerator Lab, Hsinchu 30013, Taiwan. | - |
| local.description.affiliation | [Nongjai, R.; Asokan, K.] Interuniv Accelerator Ctr, Mat Sci Grp, New Delhi 110067, India. | - |
| local.description.affiliation | [Sankaran, K. J.] CSIR, Inst Minerals & Mat Technol, Bhubaneswar 751013, India. | - |
| local.uhasselt.international | yes | - |
| item.validation | ecoom 2022 | - |
| item.fullcitation | CHAKRABORTY, Tanmoy; KAMATCHI JOTHIRAMALINGAM, Sankaran; Srinivasu, K.; Nongjai, R.; Asokan, K.; Chen, C.H.; Niu, H. & HAENEN, Ken (2021) Enhancement of concentration of XeV and GeV centers in microcrystalline diamond films through He+ irradiation. In: Diamond and Related Materials, 120 , (Art N° 108587). | - |
| item.contributor | CHAKRABORTY, Tanmoy | - |
| item.contributor | KAMATCHI JOTHIRAMALINGAM, Sankaran | - |
| item.contributor | Srinivasu, K. | - |
| item.contributor | Nongjai, R. | - |
| item.contributor | Asokan, K. | - |
| item.contributor | Chen, C.H. | - |
| item.contributor | Niu, H. | - |
| item.contributor | HAENEN, Ken | - |
| item.fulltext | With Fulltext | - |
| item.accessRights | Open Access | - |
| crisitem.journal.issn | 0925-9635 | - |
| crisitem.journal.eissn | 1879-0062 | - |
| Appears in Collections: | Research publications | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1-s2.0-S0925963521003502-main.pdf | Published version | 1.72 MB | Adobe PDF | View/Open |
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