Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/36398
Title: A Novel Strategy for the Application of an Oxide Layer to the Front Interface of Cu(In,Ga)Se2 Thin Film Solar Cells: Al2O3/HfO2 Multi-Stack Design With Contact Openings
Authors: BULDU KOHL, Dilara 
DE WILD, Jessica 
KOHL, Thierry 
BIRANT, Gizem 
BRAMMERTZ, Guy 
MEURIS, Marc 
POORTMANS, Jef 
VERMANG, Bart 
Issue Date: 2022
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Source: IEEE Journal of Photovoltaics, 12 (1) , p. 301 -308
Abstract: Interface recombination is one of the factors limiting the performance of Cu(In,Ga)Se_2 (CIGS). Especially in the absence of band grading at the front and rear surface, interface passivation approaches become important to improve device performance. The integration of an oxide layer as passivation layer at the front surface of the CIGS requires meticulous considerations in order not to impact the further steps of the solar cell production. In this article, a novel approach is reported to try to tackle the problem of interface recombination at the front surface of CIGS without affecting further solar cell production steps. In this approach, an Al_2O_3/HfO_2 multi-stack layer with contact openings is applied. NaCl template patterning with preliminarily selected parameters was used to create a homogeneous pattern of contact opening on the CIGS surface and allow the current flow in the device. After the removal of the NaCl islands, the holes in the multi-stack (openings) were visualized by scanning electron microscopy. In addition, energy-dispersive X-ray spectroscopy (EDS) was performed before and after chemical bath deposition of the buffer layer. The EDS result confirmed that the undesired etching of the Al_2O_3 layer during buffer layer deposition was prevented by using a thin HfO_2 layer. Solar cells were produced by using preliminarily selected parameters for the multi-stack design. As a result, without having a significant negative impact on the solar cell parameters, a device design was achieved which is almost comparable with the reference device. In addition, options for future improvement and development are discussed.
Notes: Buldu, DG (corresponding author), Hasselt Univ, Inst Mat Res, Solliance, B-3590 Diepenbeek, Belgium.; Buldu, DG (corresponding author), IMEC Div IMOMEC, Solliance, B-3590 Diepenbeek, Belgium.; Buldu, DG (corresponding author), Energyville, B-3600 Genk, Belgium.
dilara.gokcen.buldu@imec.be; jessica.dewild@imec.be;
thierry.kohl@imec.be; gizem.birant@imec.be; guy.brammertz@imec.be;
marc.meuris@imec.be; jef.poortmans@imec.be; bart.vermang@imec.be
Keywords: Passivation;Hafnium oxide;Buffer layers;Acoustics;Photovoltaic cells;Performance evaluation;Pollution measurement;Al_2O_3;contact openings;Cu(InGa)Se_2 (CIGS) solar cells;front interface;HfO_2;multi-stack
Document URI: http://hdl.handle.net/1942/36398
ISSN: 2156-3381
e-ISSN: 2156-3403
DOI: 10.1109/JPHOTOV.2021.3120515
ISI #: 000732335900001
Rights: 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.
Category: A1
Type: Journal Contribution
Validations: ecoom 2023
Appears in Collections:Research publications

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