Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/36632
Title: In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells
Authors: FIRAT, Meric 
Radhakrishnan, Hariharsudan Sivaramakrishnan
Payo, Maria Recaman
DUERINCKX, Filip 
TOUS, Loic 
POORTMANS, Jef 
Issue Date: 2022
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: SOLAR ENERGY, 231 , p. 78 -87
Abstract: In situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films by low pressure chemical vapor deposition (LPCVD) were studied in this work for the fabrication of poly-Si passivating contacts. In situ doping was targeted for enabling the full potential of the high-throughput LPCVD technique, as it could allow leaner fabrication of industrial solar cells featuring poly-Si passivating contacts than the more common ex situ doping routes. By careful optimization of the deposition temperature and the flows of the carrier gas (H-2) and the dopant precursor (PH3), high doping in the poly-Si layers was achieved with active P concentrations up to 1.3.10(20) cm(-3) . While reduction in the deposition rate (r(dep)) and thus in the throughput is a known problem when growing in situ P-doped films by LPCVD, this reduction could be limited, and the resulting r(dep) was equal to 0.078 nm/s. The developed poly-Si films were characterized both structurally and in terms of their passivation potential in poly-Si contacts. The latter yielded recombination current densities down to 1.5 fA/cm(2) in passivated (J(0, p)) and 25.6 fA/cm(2) in screen-printing metallized (J(0, m)) regions on saw-damage removed (SDR) Cz-Si surfaces, accompanied by a contact resistivity (rho(c,m)) of 4.9 m Omega.cm(2). On textured Cz-Si surfaces, the corresponding values were J(0, p) = 3.5 fA/cm(2), J(0,m )= 56.7 fA/cm(2), and rho(c,m) = 1.8 m Omega.cm(2). Optical impact of the developed poly-Si films was also assessed and a short circuit density loss of 0.41 mA/cm(2) is predicted per each 100 nm of poly-Si applied at the rear side of solar cells.
Notes: Firat, M (corresponding author), Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium.; Firat, M (corresponding author), Imec, Partner EnergyVille, Kapeldreef 75, B-3001 Leuven, Belgium.
meric.firat@imec.be
Keywords: Passivating contacts;Solar cells;Polysilicon;LPCVD;In situ doping;Phosphorus doping
Document URI: http://hdl.handle.net/1942/36632
ISSN: 0038-092X
e-ISSN: 1471-1257
DOI: 10.1016/j.solener.2021.11.045
ISI #: WOS:000744236400008
Rights: 2021 International Solar Energy Society. Published by Elsevier Ltd. All rights reserved.
Category: A1
Type: Journal Contribution
Validations: ecoom 2023
Appears in Collections:Research publications

Show full item record

WEB OF SCIENCETM
Citations

12
checked on Mar 23, 2024

Page view(s)

42
checked on Sep 6, 2022

Download(s)

6
checked on Sep 6, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.