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Title: | In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells | Authors: | FIRAT, Meric Radhakrishnan, Hariharsudan Sivaramakrishnan Payo, Maria Recaman DUERINCKX, Filip TOUS, Loic POORTMANS, Jef |
Issue Date: | 2022 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | Solar Energy, 231 , p. 78 -87 | Abstract: | In situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films by low pressure chemical vapor deposition (LPCVD) were studied in this work for the fabrication of poly-Si passivating contacts. In situ doping was targeted for enabling the full potential of the high-throughput LPCVD technique, as it could allow leaner fabrication of industrial solar cells featuring poly-Si passivating contacts than the more common ex situ doping routes. By careful optimization of the deposition temperature and the flows of the carrier gas (H-2) and the dopant precursor (PH3), high doping in the poly-Si layers was achieved with active P concentrations up to 1.3.10(20) cm(-3) . While reduction in the deposition rate (r(dep)) and thus in the throughput is a known problem when growing in situ P-doped films by LPCVD, this reduction could be limited, and the resulting r(dep) was equal to 0.078 nm/s. The developed poly-Si films were characterized both structurally and in terms of their passivation potential in poly-Si contacts. The latter yielded recombination current densities down to 1.5 fA/cm(2) in passivated (J(0, p)) and 25.6 fA/cm(2) in screen-printing metallized (J(0, m)) regions on saw-damage removed (SDR) Cz-Si surfaces, accompanied by a contact resistivity (rho(c,m)) of 4.9 m Omega.cm(2). On textured Cz-Si surfaces, the corresponding values were J(0, p) = 3.5 fA/cm(2), J(0,m )= 56.7 fA/cm(2), and rho(c,m) = 1.8 m Omega.cm(2). Optical impact of the developed poly-Si films was also assessed and a short circuit density loss of 0.41 mA/cm(2) is predicted per each 100 nm of poly-Si applied at the rear side of solar cells. | Notes: | Firat, M (corresponding author), Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium.; Firat, M (corresponding author), Imec, Partner EnergyVille, Kapeldreef 75, B-3001 Leuven, Belgium. meric.firat@imec.be |
Keywords: | Passivating contacts;Solar cells;Polysilicon;LPCVD;In situ doping;Phosphorus doping | Document URI: | http://hdl.handle.net/1942/36632 | ISSN: | 0038-092X | e-ISSN: | 1471-1257 | DOI: | 10.1016/j.solener.2021.11.045 | ISI #: | WOS:000744236400008 | Rights: | 2021 International Solar Energy Society. Published by Elsevier Ltd. All rights reserved. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2023 |
Appears in Collections: | Research publications |
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In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells.pdf Restricted Access | Published version | 3.74 MB | Adobe PDF | View/Open Request a copy |
Unmarked Revised Manuscript for Submission.pdf | Peer-reviewed author version | 1.95 MB | Adobe PDF | View/Open |
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