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http://hdl.handle.net/1942/36960
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DC Field | Value | Language |
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dc.contributor.author | FIRAT, Meric | - |
dc.contributor.author | Radhakrishnan, Hariharsudan Sivaramakrishnan | - |
dc.contributor.author | Payo, Maria Recaman | - |
dc.contributor.author | CHOULAT, Patrick | - |
dc.contributor.author | Badran, Hussein | - |
dc.contributor.author | VAN DER HEIDE, Arvid | - |
dc.contributor.author | GOVAERTS, Jonathan | - |
dc.contributor.author | DUERINCKX, Filip | - |
dc.contributor.author | TOUS, Loic | - |
dc.contributor.author | Hajjiah, Ali | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2022-03-23T08:12:32Z | - |
dc.date.available | 2022-03-23T08:12:32Z | - |
dc.date.issued | 2022 | - |
dc.date.submitted | 2022-03-18T09:52:26Z | - |
dc.identifier.citation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, 236 (Art N° 111544) | - |
dc.identifier.uri | http://hdl.handle.net/1942/36960 | - |
dc.description.abstract | The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm(2)) bifacial n-type Tunnel Oxide Passivated Contact (nTOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm(2) and 65.8 fA/cm(2), respectively, and a low contact resistivity of 2.0 m Omega.cm(2). For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150-200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films. | - |
dc.description.sponsorship | The authors would like to acknowledge Sukhvinder Singh from Imec and Rajiv Sharma from KU Leuven for the valuable discussions and their help with the sample fabrication. This work was supported by the European Union’s Horizon2020 Programme for research, technological development, and demonstration [grant number 857793]; and by the Kuwait Foundation for the Advancement of Sciences [grant number CN18-15 EE-01]. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.rights | 2021 Elsevier B.V. All rights reserved | - |
dc.subject.other | Passivating contacts | - |
dc.subject.other | TOPCon | - |
dc.subject.other | Solar cells | - |
dc.subject.other | Polysilicon | - |
dc.subject.other | LPCVD | - |
dc.subject.other | In situ phosphorus doping | - |
dc.title | Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts | - |
dc.type | Journal Contribution | - |
dc.identifier.volume | 236 | - |
local.format.pages | 12 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Firat, M (corresponding author), Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium. | - |
dc.description.notes | meric.firat@imec.be | - |
local.publisher.place | RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
local.bibliographicCitation.artnr | 111544 | - |
local.type.programme | H2020 | - |
local.relation.h2020 | 857793 | - |
dc.identifier.doi | 10.1016/j.solmat.2021.111544 | - |
dc.identifier.isi | WOS:000761233600003 | - |
local.provider.type | wosris | - |
local.description.affiliation | [Firat, Meric; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium. | - |
local.description.affiliation | [Firat, Meric; Radhakrishnan, Hariharsudan Sivaramakrishnan; Choulat, Patrick; van der Heide, Arvid; Govaerts, Jonathan; Duerinckx, Filip; Tous, Loic; Poortmans, Jef] Imec Partner Energy Ville, Kapeldreef 75, B-3001 Leuven, Belgium. | - |
local.description.affiliation | [Payo, Maria Recaman] Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200d, B-3001 Leuven, Belgium. | - |
local.description.affiliation | [Badran, Hussein; Hajjiah, Ali] Kuwait Univ, Coll Engn & Petr, Dept Elect Engn, Safat 13133, Kuwait. | - |
local.description.affiliation | [Poortmans, Jef] UHasselt, Campus Diepenbeek,Agoralaan Gebouw D, B-3590 Diepenbeek, Belgium. | - |
local.uhasselt.international | yes | - |
item.validation | ecoom 2023 | - |
item.contributor | FIRAT, Meric | - |
item.contributor | Radhakrishnan, Hariharsudan Sivaramakrishnan | - |
item.contributor | Payo, Maria Recaman | - |
item.contributor | CHOULAT, Patrick | - |
item.contributor | Badran, Hussein | - |
item.contributor | VAN DER HEIDE, Arvid | - |
item.contributor | GOVAERTS, Jonathan | - |
item.contributor | DUERINCKX, Filip | - |
item.contributor | TOUS, Loic | - |
item.contributor | Hajjiah, Ali | - |
item.contributor | POORTMANS, Jef | - |
item.accessRights | Open Access | - |
item.fullcitation | FIRAT, Meric; Radhakrishnan, Hariharsudan Sivaramakrishnan; Payo, Maria Recaman; CHOULAT, Patrick; Badran, Hussein; VAN DER HEIDE, Arvid; GOVAERTS, Jonathan; DUERINCKX, Filip; TOUS, Loic; Hajjiah, Ali & POORTMANS, Jef (2022) Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts. In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, 236 (Art N° 111544). | - |
item.fulltext | With Fulltext | - |
crisitem.journal.issn | 0927-0248 | - |
crisitem.journal.eissn | 1879-3398 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts.pdf Restricted Access | Published version | 5.82 MB | Adobe PDF | View/Open Request a copy |
Unmarked Revised Manuscript - Corrected.pdf | Peer-reviewed author version | 1 MB | Adobe PDF | View/Open |
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