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http://hdl.handle.net/1942/38135
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DC Field | Value | Language |
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dc.contributor.author | SHARMA, Rajiv | - |
dc.contributor.author | Alleva, Alessandro | - |
dc.contributor.author | Hajjiah, Ali | - |
dc.contributor.author | SIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2022-09-26T07:43:27Z | - |
dc.date.available | 2022-09-26T07:43:27Z | - |
dc.date.issued | 2022 | - |
dc.date.submitted | 2022-09-07T13:40:18Z | - |
dc.identifier.citation | ACS Applied Energy Materials, 5 (8) , p. 9994 -10001 | - |
dc.identifier.uri | http://hdl.handle.net/1942/38135 | - |
dc.description.abstract | For application in high-efficiency silicon solar cells bearing SiOx-based passivating contacts, we have developed 100 nm thick, PECVD Si-rich amorphous films, capable of being processed in industrial furnaces without blistering, by incorporating adequate amounts of each of C, N, and O in the films during PECVD. We found that non-blistering of the films is a result of the low intrinsic stress (compressive) in the films and not due to a low H content, which, in fact, is much higher in the non-blistering films than in the C-, N-, and O-free films. Among the three types of nonblistering Si-rich amorphous films, we conclude that the O-incorporated one is the most suitable for application in SiOx-based passivating contacts owing to the film's high excess Si content and ability to crystallize. | - |
dc.description.sponsorship | The authors gratefully acknowledge the funding from the Kuwait Foundation for the Advancement of Sciences (KFAS) under the project number CN18-15EE-01. Besides, they are thankful to the Material Characterization and Analysis group at IMEC for ERD measurements. They also thank the anonymous reviewers of this manuscript for their critical feedback. | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.rights | 2022 American Chemical Society | - |
dc.subject.other | blistering | - |
dc.subject.other | a-Si:H | - |
dc.subject.other | PECVD | - |
dc.subject.other | stress | - |
dc.subject.other | poly-Si/SiOx contact | - |
dc.subject.other | silicon solar cells | - |
dc.title | Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 10001 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 9994 | - |
dc.identifier.volume | 5 | - |
local.format.pages | 8 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Sharma, R (corresponding author), Imo Imomec, IMEC, B-3600 Genk, Belgium.; Sharma, R (corresponding author), EnergyVille, Imo Imomec, B-3600 Genk, Belgium.; Sharma, R (corresponding author), Hasselt Univ, Imo Imomec, B-3500 Hasselt, Belgium.; Sharma, R (corresponding author), Katholieke Univ Leuven, B-3001 Leuven, Belgium. | - |
dc.description.notes | rajiv.sharma@imec.be | - |
local.publisher.place | 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1021/acsaem.2c01631 | - |
dc.identifier.isi | 000842981400001 | - |
dc.contributor.orcid | Hajjiah, Ali/0000-0002-9736-7372 | - |
local.provider.type | wosris | - |
local.description.affiliation | [Alleva, Alessandro] Politecn Milan, I-20133 Milan, Italy. | - |
local.description.affiliation | [Hajjiah, Ali] Kuwait Univ, Coll Engn & Petr, Dept Elect Engn, Kuwait 13060, Kuwait. | - |
local.description.affiliation | [Sharma, Rajiv; Radhakrishnan, Hariharsudan Sivaramakrishnan; Poortmans, Jef] Imo Imomec, IMEC, B-3600 Genk, Belgium. | - |
local.description.affiliation | [Sharma, Rajiv; Radhakrishnan, Hariharsudan Sivaramakrishnan; Poortmans, Jef] EnergyVille, Imo Imomec, B-3600 Genk, Belgium. | - |
local.description.affiliation | [Sharma, Rajiv; Radhakrishnan, Hariharsudan Sivaramakrishnan; Poortmans, Jef] Hasselt Univ, Imo Imomec, B-3500 Hasselt, Belgium. | - |
local.description.affiliation | [Sharma, Rajiv; Poortmans, Jef] Katholieke Univ Leuven, B-3001 Leuven, Belgium. | - |
local.uhasselt.international | yes | - |
item.contributor | SHARMA, Rajiv | - |
item.contributor | Alleva, Alessandro | - |
item.contributor | Hajjiah, Ali | - |
item.contributor | SIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan | - |
item.contributor | POORTMANS, Jef | - |
item.validation | ecoom 2023 | - |
item.fullcitation | SHARMA, Rajiv; Alleva, Alessandro; Hajjiah, Ali; SIVARAMAKRISHNAN RADHAKRISHNAN, Hariharsudan & POORTMANS, Jef (2022) Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells. In: ACS Applied Energy Materials, 5 (8) , p. 9994 -10001. | - |
item.accessRights | Restricted Access | - |
item.fulltext | With Fulltext | - |
crisitem.journal.issn | 2574-0962 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
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Comparison of C-, N-, and O-Incorporated Non-blistering PECVD Si Films for Application in SiOx-Based Passivating Contacts for Si Solar Cells.pdf Restricted Access | Published version | 3.77 MB | Adobe PDF | View/Open Request a copy |
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