Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/39683
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dc.contributor.authorLOPES, Tomas-
dc.contributor.authorTeixeira, JP-
dc.contributor.authorCurado, M-
dc.contributor.authorFerreira, BR-
dc.contributor.authorOliveira, AJN-
dc.contributor.authorCunha, JMV-
dc.contributor.authorMonteiro, M-
dc.contributor.authorViolas, A-
dc.contributor.authorBarbosa, JRS-
dc.contributor.authorSousa, PC-
dc.contributor.authorCaha, I-
dc.contributor.authorBorme, J-
dc.contributor.authorOliveira, K-
dc.contributor.authorRing, J-
dc.contributor.authorChen, WC-
dc.contributor.authorZhou, Y-
dc.contributor.authorTakei, K-
dc.contributor.authorNiemi, E-
dc.contributor.authorDeepak, FL-
dc.contributor.authorEdoff, M-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorFernandes, PA-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorSalome, PMP-
dc.date.accessioned2023-03-14T14:51:01Z-
dc.date.available2023-03-14T14:51:01Z-
dc.date.issued2023-
dc.date.submitted2023-03-06T14:03:39Z-
dc.identifier.citationnpj Flexible Electronics, 7 (1), Art nr. 4-
dc.identifier.urihttp://hdl.handle.net/1942/39683-
dc.description.abstractThe incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se-2 based solar cells is shown. The fabrication used an industry scalable lithography technique-nanoimprint lithography (NIL)-for a 15 x 15 cm(2) dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in the rigid solar cells' performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance Simulator. The device on stainless-steel showed a slightly lower performance than the rigid approach, due to additional challenges of processing steel substrates, even though scanning transmission electron microscopy did not show clear evidence of impurity diffusion. Notwithstanding, time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible substrate. Nevertheless, bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.-
dc.description.sponsorshipThis work was funded in part by the Fundação para a Ciência e a Tecnologia (FCT)under Grants 2020.04564.BD, IF/00133/2015, PD/BD/142780/2018, SFRH/BD/146776/2019, UIDB/04564/2020 and UIDP/04564/2020, 2020.07073.BD, as well as through theprojects NovaCell (PTDC/CTM-CTM/28075/2017), CASOLEM (028917)“CorrelatedAnalysis of Inorganic Solar Cells in and outside an Electron Microscope”, andInovSolarCells (PTDC/FISMAC/29696/2017) co-funded by FCT and the ERDF throughCOMPETE2020. And by the European Union’s Horizon 2020 research and innovationprogramme under the grants agreements N°. 720887 (ARCIGS-M project) and grandagreement N°.715027 (Uniting PV). The Special Research Fund (BOF) of HasseltUniversity is also acknowledged. P.M.P.S. and P.A.F. would like to acknowledge FCTfor the support of the project FCT UIDB/04730/2020. This work was developed withinthe scope of the project i3N, UIDB/50025/2020 & UIDP/50025/2020,financed bynational funds through the FCT/MEC. The authors also acknowledge the support ofCarlos Calaza in the fabrication for the 200 mm Si point contact stamp.-
dc.language.isoen-
dc.publisherNATURE PORTFOLIO-
dc.rightsThe Author(s) 2023 This article is licensed under a Creative CommonsAttribution 4.0 International License, which permits use, sharing,adaptation, distribution and reproduction in any medium or format, as long as you giveappropriate credit to the original author(s) and the source, provide a link to the CreativeCommons license, and indicate if changes were made. The images or other third partymaterial in this article are included in the article’s Creative Commons license, unlessindicated otherwise in a credit line to the material. If material is not included in thearticle’s Creative Commons license and your intended use is not permitted by statutoryregulation or exceeds the permitted use, you will need to obtain permission directlyfrom the copyright holder. To view a copy of this license, visithttp://creativecommons.org/licenses/by/4.0/-
dc.titleCu(In,Ga)Se-2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology-
dc.typeJournal Contribution-
dc.identifier.issue1-
dc.identifier.volume7-
local.format.pages11-
local.bibliographicCitation.jcatA1-
local.publisher.placeHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr4-
dc.identifier.doi10.1038/s41528-023-00237-4-
dc.identifier.isi000924992800001-
local.provider.typeWeb of Science-
local.uhasselt.internationalyes-
item.fullcitationLOPES, Tomas; Teixeira, JP; Curado, M; Ferreira, BR; Oliveira, AJN; Cunha, JMV; Monteiro, M; Violas, A; Barbosa, JRS; Sousa, PC; Caha, I; Borme, J; Oliveira, K; Ring, J; Chen, WC; Zhou, Y; Takei, K; Niemi, E; Deepak, FL; Edoff, M; BRAMMERTZ, Guy; Fernandes, PA; VERMANG, Bart & Salome, PMP (2023) Cu(In,Ga)Se-2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology. In: npj Flexible Electronics, 7 (1), Art nr. 4.-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
item.contributorLOPES, Tomas-
item.contributorTeixeira, JP-
item.contributorCurado, M-
item.contributorFerreira, BR-
item.contributorOliveira, AJN-
item.contributorCunha, JMV-
item.contributorMonteiro, M-
item.contributorViolas, A-
item.contributorBarbosa, JRS-
item.contributorSousa, PC-
item.contributorCaha, I-
item.contributorBorme, J-
item.contributorOliveira, K-
item.contributorRing, J-
item.contributorChen, WC-
item.contributorZhou, Y-
item.contributorTakei, K-
item.contributorNiemi, E-
item.contributorDeepak, FL-
item.contributorEdoff, M-
item.contributorBRAMMERTZ, Guy-
item.contributorFernandes, PA-
item.contributorVERMANG, Bart-
item.contributorSalome, PMP-
crisitem.journal.eissn2397-4621-
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