Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/39854
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dc.contributor.authorYilmaz, Pelin-
dc.contributor.authorDE WILD, Jessica-
dc.contributor.authorAninat, Remi-
dc.contributor.authorWeber, Thomas-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorSchmitz, Jurriaan-
dc.contributor.authorTheelen, Mirjam-
dc.date.accessioned2023-03-27T12:54:02Z-
dc.date.available2023-03-27T12:54:02Z-
dc.date.issued2023-
dc.date.submitted2023-03-24T12:37:58Z-
dc.identifier.citationPROGRESS IN PHOTOVOLTAICS, 31, p. 627-636-
dc.identifier.urihttp://hdl.handle.net/1942/39854-
dc.description.abstractA post-mortem analysis is conducted after potential-induced degradation (PID) of a commercial copper-indium-gallium-selenide (CIGS) photovoltaic module. After PID, the conversion efficiency of the total module decreased by 62%. Electroluminescence images of the module show that the edges of the modules were much more affected by the PID than the middle part of the module. Coring samples were prepared of the different areas and chemical compositional information of the various areas was combined with electrical characterisation, cell modelling and luminescence data to obtain an overall perspective on the root cause of degradation in these modules during high voltage stress. Consistent with earlier studies on cell level, the module analysis shows the occurrence of alkali migration. From current-voltage modelling, it was concluded that the degradation of the most affected areas is due to an increase in bulk and CdS/CIGS interface defects, likely induced by ion migration. Further degradation on the same samples occurred when they are taken out of the argon-filled glovebox and stored under ambient conditions. Remarkably, the PID-degraded areas show stronger degradation when left in ambient atmosphere, as well as a stronger Na redistribution. These new results show that ion migration not only causes the immediate degradation but also strongly affects the longer-term stability of the cells in ambient atmosphere. This indicates that PID degradation makes CIGS devices more vulnerable to hermeticity problems, which are most prominent at the module edges.-
dc.description.sponsorshipWe would like to acknowledge the Early Research Program ‘Sustainability & Reliability for solar and other (opto-)electronic thin-film devices’ (STAR) from TNO for partial funding of this work. Moreover, this work is part of the Solar.Eranet project Performance and Electroluminescence Analysis on Reliability and Lifetime of Thin-Film Photovoltaics (PEARL) and supported in Germany by a grant of the BMWi under project number 0324193B and in the Netherlands under project number TEUE116203. We also would like to thank Joran van den Berg, Klaas Bakker, Gonzalo Ott Cruz and Henk Steijvers for their help in the laboratory.-
dc.language.isoen-
dc.publisherWILEY-
dc.rights2023 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.-
dc.subject.otherCIGS PV-
dc.subject.othercoring-
dc.subject.otherpost-mortem analysis-
dc.subject.otherpotential-induced degradation-
dc.titleIn-depth analysis of potential-induced degradation in a commercial CIGS-
dc.typeJournal Contribution-
dc.identifier.epage636-
dc.identifier.spage627-
dc.identifier.volume31-
local.format.pages10-
local.bibliographicCitation.jcatA1-
dc.description.notesYilmaz, P; Schmitz, J; Theelen, M (corresponding author), Univ Twente, MESA Inst Nanotechnol, Enschede, Netherlands.; Yilmaz, P; Theelen, M (corresponding author), TNO partner Solliance, Eindhoven, Netherlands.-
dc.description.notespelinyilmaz88@gmail.com; j.schmitz@utwente.nl; mirjam.theelen@tno.nl-
local.publisher.place111 RIVER ST, HOBOKEN 07030-5774, NJ USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1002/pip.3670-
dc.identifier.isi000944233800001-
local.provider.typewosris-
local.description.affiliation[Yilmaz, Pelin; Schmitz, Jurriaan; Theelen, Mirjam] Univ Twente, MESA Inst Nanotechnol, Enschede, Netherlands.-
local.description.affiliation[Yilmaz, Pelin; Aninat, Remi; Theelen, Mirjam] TNO partner Solliance, Eindhoven, Netherlands.-
local.description.affiliation[de Wild, Jessica; Vermang, Bart] Hasselt Univ, Imo Imomec, Martelarenlaan 42, B-3500 Hasselt, Belgium.-
local.description.affiliation[de Wild, Jessica; Vermang, Bart] Imec, Imo Imomec, Thor Pk 8320, B-3600 Genk, Belgium.-
local.description.affiliation[de Wild, Jessica; Vermang, Bart] EnergyVille, Imo Imomec, Thor Pk 8320, B-3600 Genk, Belgium.-
local.description.affiliation[Weber, Thomas] PI Photovolta Inst Berlin AG, Berlin, Germany.-
local.uhasselt.internationalyes-
item.accessRightsOpen Access-
item.fullcitationYilmaz, Pelin; DE WILD, Jessica; Aninat, Remi; Weber, Thomas; VERMANG, Bart; Schmitz, Jurriaan & Theelen, Mirjam (2023) In-depth analysis of potential-induced degradation in a commercial CIGS. In: PROGRESS IN PHOTOVOLTAICS, 31, p. 627-636.-
item.fulltextWith Fulltext-
item.contributorYilmaz, Pelin-
item.contributorDE WILD, Jessica-
item.contributorAninat, Remi-
item.contributorWeber, Thomas-
item.contributorVERMANG, Bart-
item.contributorSchmitz, Jurriaan-
item.contributorTheelen, Mirjam-
crisitem.journal.issn1062-7995-
crisitem.journal.eissn1099-159X-
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