Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/40574
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jacob, Nithin Thomas | - |
dc.contributor.author | Lauwaert, Jeroen | - |
dc.contributor.author | VERMANG, Bart | - |
dc.contributor.author | Lauwaert, Johan | - |
dc.date.accessioned | 2023-07-13T10:32:02Z | - |
dc.date.available | 2023-07-13T10:32:02Z | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-07-06T13:06:11Z | - |
dc.identifier.citation | SOLAR ENERGY, 259 , p. 320 -327 | - |
dc.identifier.uri | http://hdl.handle.net/1942/40574 | - |
dc.description.abstract | Carbon capture and utilization (CCU) is a promising solution for reducing reliance on fossil fuels and incentiviz-ing the capture of CO2. A key requirement for CCU is the development of effective photo/electrocatalysts with high CO2 reduction activity that can produce high-value products. Direct Z-scheme heterojunctions named after their charge transfer mechanism, use sunlight to conduct various photocatalytic reactions, similar to photosynthesis in plants. Solar cell simulation techniques can be used to obtain material properties and insights into the electronic characteristics of these materials. By solving semiconductor differential equations that model the behavior of semiconductors under different light intensities and applied biases, the solar cell simulator program (SCAPS) can evaluate the energy band edges, carrier concentrations, and output characteristics of the device. In this study, a method is proposed for modeling direct Z-scheme junctions in SCAPS by simulating the Shockley Read Hall (SRH) recombination using defect densities at the interface of the recombination junction (RJ). An example using a TiO2/CdIn2S4 Z-scheme junction is presented and the impact of defects on the performance of the junction is discussed. It is presented that the high recombination rates at the interface via these defects improve the device performance. | - |
dc.description.sponsorship | The authors would like to acknowledge Catalisti VLAIO (Vlaanderen Agentschap Innoveren & Ondernemen) for their funding through the Moonshot SYN-CAT project (HBC.2020.2614). The funder played no role in the study design, data collection, analysis and interpretation of data, or the writing of this manuscript. The cooperation of the consortium partners is acknowledged and appreciated. All authors read and approved the final manuscript. | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.rights | 2023 International Solar Energy Society. Published by Elsevier Ltd. All rights reserved. | - |
dc.subject.other | Semiconductor | - |
dc.subject.other | Catalysis | - |
dc.subject.other | Simulations | - |
dc.subject.other | Modeling | - |
dc.subject.other | Photocatalysis | - |
dc.subject.other | Electrocatalysis | - |
dc.title | Numerical device modeling for direct Z-scheme junctions using a solar cell simulator | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 327 | - |
dc.identifier.spage | 320 | - |
dc.identifier.volume | 259 | - |
local.format.pages | 8 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Jacob, NT; Lauwaert, J (corresponding author), Univ Ghent, Dept Elect & Informat Syst, Technol Pk 126, B-9052 Ghent, Belgium. | - |
dc.description.notes | nithintj101@outlook.com; Jeroen.Lauwaert@UGent.be; Bart.Vermang@imec.be; | - |
dc.description.notes | Johan.Lauwaert@UGent.be | - |
local.publisher.place | THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1016/j.solener.2023.05.013 | - |
dc.identifier.isi | 001010403300001 | - |
local.provider.type | wosris | - |
local.description.affiliation | [Jacob, Nithin Thomas; Lauwaert, Johan] Univ Ghent, Dept Elect & Informat Syst, Technol Pk 126, B-9052 Ghent, Belgium. | - |
local.description.affiliation | [Lauwaert, Jeroen] Univ Ghent, Dept Mat Text & Chem Engn, Valentin Vaerwyckweg 1, B-9000 Ghent, Belgium. | - |
local.description.affiliation | [Vermang, Bart] Hasselt Univ, Inst Mat Res IMO, Agoralaan gebouw H, B-3590 Diepenbeek, Belgium. | - |
local.description.affiliation | [Vermang, Bart] IMEC Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | - |
local.description.affiliation | [Vermang, Bart] EnergyVille, Thor Pk 8320, B-3600 Genk, Belgium. | - |
local.uhasselt.international | no | - |
item.fullcitation | Jacob, Nithin Thomas; Lauwaert, Jeroen; VERMANG, Bart & Lauwaert, Johan (2023) Numerical device modeling for direct Z-scheme junctions using a solar cell simulator. In: SOLAR ENERGY, 259 , p. 320 -327. | - |
item.fulltext | With Fulltext | - |
item.contributor | Jacob, Nithin Thomas | - |
item.contributor | Lauwaert, Jeroen | - |
item.contributor | VERMANG, Bart | - |
item.contributor | Lauwaert, Johan | - |
item.accessRights | Open Access | - |
crisitem.journal.issn | 0038-092X | - |
crisitem.journal.eissn | 1471-1257 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Numerical device modeling for direct Z-scheme junctions using a solar cell simulator.pdf Restricted Access | Published version | 1.79 MB | Adobe PDF | View/Open Request a copy |
Numerical device modeling for direct Z-scheme junctions using a solar cell simulator.pdf | Peer-reviewed author version | 524.33 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.