Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/40828
Title: Microplasma Illumination Enhancement in N plus P-Co-Ion-Implanted Nanocrystalline Diamond Films
Authors: Sethy, Salila Kumar
Sankaran, Kamatchi Jothiramalingam
Gupta, Prasanth
Thomas, Joseph Palathinkal
Dash, Ajit
Kennedy, John V.
Leung, Kam Tong
HAENEN, Ken 
Issue Date: 2023
Publisher: WILEY-V C H VERLAG GMBH
Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
Status: Early view
Abstract: N- and P-co-ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm(-1) and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm(-2) (@510 V) with plasma life-time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond-to-Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.
Notes: Sankaran, KJ (corresponding author), CSIR Inst Minerals & Mat Technol, Bhubaneswar 751013, India.; Sankaran, KJ (corresponding author), Acad Sci & Innovat Res AcSIR, CSIR IMMT Campus, Ghaziabad 201002, India.
kjsankaran@immt.res.in
Keywords: co-ion implantation;electrical conductivity;grain boundaries;graphite;microplasma illumination;nanocrystalline diamond
Document URI: http://hdl.handle.net/1942/40828
ISSN: 1862-6300
e-ISSN: 1862-6319
DOI: 10.1002/pssa.202300157
ISI #: 001052216300001
Rights: 2023 Wiley-VCH GmbH
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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