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http://hdl.handle.net/1942/4163
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DC Field | Value | Language |
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dc.contributor.author | Van Gestel, D. | - |
dc.contributor.author | Romero, M. J. | - |
dc.contributor.author | GORDON, Ivan | - |
dc.contributor.author | Carnel, L. | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | Beaucarne, Guy | - |
dc.contributor.author | Al-Jassim, M. | - |
dc.contributor.author | POORTMANS, Jef | - |
dc.date.accessioned | 2007-12-11T09:23:13Z | - |
dc.date.available | 2007-12-11T09:23:13Z | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 90(9) | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/1942/4163 | - |
dc.description.abstract | Defect etching revealed a very large density (similar to 10(9) cm(-2)) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects. (c) 2007 American Institute of Physics. | - |
dc.format.extent | 90117 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 9 | - |
dc.identifier.volume | 90 | - |
local.format.pages | 3 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | IMEC, B-3001 Louvain, Belgium. Natl Renewable Energy Lab, Golden, CO 80401 USA. Hasselt Univ, Mat Res Inst, B-3590 Diepenbeek, Belgium. IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium. Natl Renewable Energy Lab, Golden, CO 80401 USA.Van Gestel, D, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.dries.vangestel@imec.be | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1063/1.2709643 | - |
dc.identifier.isi | 000244591700042 | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2008 | - |
item.accessRights | Open Access | - |
item.fullcitation | Van Gestel, D.; Romero, M. J.; GORDON, Ivan; Carnel, L.; D'HAEN, Jan; Beaucarne, Guy; Al-Jassim, M. & POORTMANS, Jef (2007) Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy. In: APPLIED PHYSICS LETTERS, 90(9). | - |
item.contributor | Van Gestel, D. | - |
item.contributor | Romero, M. J. | - |
item.contributor | GORDON, Ivan | - |
item.contributor | Carnel, L. | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | Beaucarne, Guy | - |
item.contributor | Al-Jassim, M. | - |
item.contributor | POORTMANS, Jef | - |
crisitem.journal.issn | 0003-6951 | - |
crisitem.journal.eissn | 1077-3118 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
artikel.pdf | 88 kB | Adobe PDF | View/Open | |
figures.zip | Supplementary material | 2.2 MB | zip | View/Open |
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