Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/42026
Title: The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films
Authors: MARY JOY, Rani 
POBEDINSKAS, Paulius 
Baule, Nina
Bai, Shengyuan
Jannis, Daen
Gauquelin, Nicolas
Pinault-Thaury, Marie-Amandine
Jomard, François
Becker, Michael Frank
ROUZBAHANI BAYATANI, Rozita 
KAMATCHI JOTHIRAMALINGAM, Sankaran 
DESTA, Derese 
D'HAEN, Jan 
LLORET, Fernando 
VERBEECK, Johan
HAENEN, Ken 
Issue Date: 2024
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Source: ACTA MATERIALIA, 264 (Art N° 119548)
Abstract: This study reports the impact of film microstructure and composition on the Young's modulus and residual stress in nanocrystalline diamond (NCD) thin films (≈ 250 nm thick) grown on silicon substrates using a linear antenna microwave plasma-enhanced chemical vapor deposition (CVD) system. Combining laser acoustic wave spectroscopy to determine the elastic properties with simple wafer curvature measurements, a straightforward method to determine the intrinsic stress in NCD films is presented. Two deposition parameters are varied: (1) the substrate temperature from 400 °C to 900 °C, and (2) the [P]/[C] ratio from 0 ppm to 8090 ppm in the H 2 /CH 4 /CO 2 /PH 3 diamond CVD plasma. The introduction of PH 3 induces a transition in the morphology of the diamond film, shifting from NCD with larger grains to ultra-NCD with a smaller grain size, concurrently resulting in a decrease in Young's modulus. Results show that the highest Young's modulus of (1130 ± 50) GPa for the undoped NCD deposited at 800 °C is comparable to single crystal diamond, indicating that NCD with excellent mechanical properties is achievable with our process for thin diamond films. Based on the film stress results, we propose the origins of tensile intrinsic stress in the diamond films. In NCD, the tensile intrinsic stress is attributed to larger grain size, while in ultra-NCD films the tensile intrinsic stress is due to grain boundaries and impurities.
Notes: Joy, RM (corresponding author), Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
rani.maryjoy@uhasselt.be; paulius.pobedinskas@uhasselt.be;
ken.haenen@uhasselt.be
Keywords: Linear antenna CVD reactor;Nanocrystalline diamond;Young's modulus;Residual stress;Phosphorus doping
Document URI: http://hdl.handle.net/1942/42026
ISSN: 1359-6454
e-ISSN: 1873-2453
DOI: 10.1016/j.actamat.2023.119548
ISI #: 001126632800001
Rights: 2023 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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