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Title: | Photoluminescence of Germanium-Vacancy Centers in Nanocrystalline Diamond Films: Implications for Quantum Sensing Applications | Authors: | MARY JOY, Rani POBEDINSKAS, Paulius BOURGEOIS, Emilie CHAKRABORTY, Tanmoy Goerlitz, Johannes Herrmann, Dennis Noel, Celine Heupel, Julia Jannis, Daen Gauquelin, Nicolas D'HAEN, Jan VERBEECK, Johan Popov, Cyril Houssiau, Laurent Becher, Christoph NESLADEK, Milos HAENEN, Ken |
Issue Date: | 2024 | Publisher: | AMER CHEMICAL SOC | Source: | ACS Applied Nano Materials, 7 (4) , p. 3873 -3884 | Abstract: | Point defects in diamond, promising candidates for nanoscale pressure-and temperature-sensing applications, are potentially scalable in polycrystalline diamond fabricated using the microwave plasma-enhanced chemical vapor deposition (MW PE CVD) technique. However, this approach introduces residual stress in the diamond films, leading to variations in the characteristic zero phonon line (ZPL) of the point defect in diamond. Here, we report the effect of residual stress on germanium-vacancy (GeV) centers in MW PE CVD nanocrystal-line diamond (NCD) films fabricated using single crystal Ge as the substrate and solid dopant source. GeV ensemble formation indicated by the zero phonon line (ZPL) at ∼602 nm is confirmed by room temperature (RT) photoluminescence (PL) measurements. PL mapping results show spatial nonuniformity in GeV formation along with other defects, including silicon-vacancy centers in the diamond films. The residual stress in NCD results in shifts in the PL peak positions. By estimating a stress shift coefficient of (2.9 ± 0.9) nm/GPa, the GeV PL peak position in the NCD film is determined to be between 598.7 and 603.2 nm. A larger ground state splitting due to the strain on a GeV-incorporated NCD pillar at a low temperature (10 K) is also reported. We also report the observation of intense ZPLs at RT that in some cases could be related to low Ge concentration and the surrounding crystalline environment. In addition, we also observe thicker microcrystalline diamond (MCD) films delaminate from the Ge substrate due to film residual stress and graphitic phase at the diamond/Ge substrate interface (confirmed by electron energy loss spectroscopy). Using this approach, a free-standing color center incorporated MCD film with dimensions up to 1 × 1 cm 2 is fabricated. Qualitative analysis using time-of-flight secondary ion mass spectroscopy reveals the presence of impurities, including Ge and silicon, in the MCD film. Our experimental results will provide insights into the scalability of GeV fabrication using the MW PE CVD technique and effectively implement NCD-based nanoscale-sensing applications. | Notes: | Joy, RM (corresponding author), Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium.; Joy, RM (corresponding author), Interuniv MicroElect Ctr IMEC Vzw, IMOMEC, B-3001 Diepenbeek, Belgium. | Keywords: | polycrystalline diamond;chemical vapor deposition (CVD);point defects;germanium;residual stress;photoluminescence | Document URI: | http://hdl.handle.net/1942/42561 | e-ISSN: | 2574-0970 | DOI: | 10.1021/acsanm.3c05491 | ISI #: | WOS:001168124100001 | Rights: | 2024AmericanChemicalSociety | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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mary-joy-et-al-2024-photoluminescence-of-germanium-vacancy-centers-in-nanocrystalline-diamond-films-implications-for.pdf Restricted Access | Published version | 6.44 MB | Adobe PDF | View/Open Request a copy |
GeV in NCD manuscript - Rani Mary Joy.pdf | Peer-reviewed author version | 1.98 MB | Adobe PDF | View/Open |
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