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Title: | Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond | Authors: | Zhai, Zhaofeng Zhang, Chuyan Chen, Bin Xiong, Ying Liang, Yan Liu, Lusheng Yang, Bing YANG, Nianjun Jiang, Xin Huang, Nan |
Issue Date: | 2024 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | ADVANCED FUNCTIONAL MATERIALS, | Status: | Early view | Abstract: | Diamond, as a highly promising “extreme” semiconductor material,necessitates electronic property engineering to unleash its full potentialin electronic and photonic devices. In this work, the diaphite nanoplatelet,consisting of (1̄11) planes of diamond nanoplatelet covalently bondedwith graphite (0001) planes, is facilely synthesized using one-step microwaveplasma enhanced chemical vapor deposition method. The high-energy plasmacreated by the pillar plays a crucial role in the formation. Importantly, alteredelectronic and optical properties are determined in the diaphite nanoplateletthrough electron energy loss spectrum, density functional theory calculations,and cathodoluminescence spectroscopy. It is revealed that the strongsp3/sp2-hybridized interfacial covalent bonding in the diaphite nanoplateletinduces the electron transfer from diamond to graphite. This modulates theelectronic structure of the near-interface layer of diamond and triggers a newlocal trapping band below the conduction band minimum within the bandgap.Consequently, the covalently-bonded diaphite exhibits a different opticalemission characteristic ranging from 2.5 to 3.64 eV, featuring a significantpeak blueshift of 430 meV compared to the H-terminated diamond. This workdemonstrates a novel method to engineer the electronic properties of diamond,opening avenues for functional semiconductor device applications of diamond | Notes: | Jiang, X; Huang, N (corresponding author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, Inst Met Res IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Huang, N (corresponding author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Jiang, X (corresponding author), Univ Siegen, Inst Mat Engn, 9-11 Paul Bonatz Str, D-57076 Siegen, Germany. xin.jiang@uni-siegen.de; nhuang@imr.ac.cn |
Keywords: | chemical vapor deposition;covalently-bonded interface;diaphite;elec-tronic property;gradia | Document URI: | http://hdl.handle.net/1942/42924 | ISSN: | 1616-301X | e-ISSN: | 1616-3028 | DOI: | 10.1002/adfm.202401949 | ISI #: | 001205057600001 | Rights: | 2024 The Authors. Advanced Functional Materials published byWiley-VCH GmbH. This is an open access article under the terms of theCreative Commons AttributionLicense, which permits use, distributionand reproduction in any medium, provided the original work is properlycited | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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Adv Funct Materials - 2024 - Zhai - Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of.pdf | Early view | 3.11 MB | Adobe PDF | View/Open |
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