Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films - a case study

Abstract

The influence of substrate surface roughness on the nucleation and growth of diamond films by chemical vapour deposition (CVD) is investigated. Silicon substrates were grinded with six different grit sizes of abrasive papers with a rotating wheel. Si was also etched by Ar+ ions to produce average surface roughness Ra = 11.29 nm on the mirror polished side (Ra = 1.17 nm). A comparison of the results of the effect of substrate roughness, on the growth behaviour of nanocrystalline diamond (NCD) films, by using both the resonant cavity and the linear antenna CVD systems, are presented here. Scanning electron microscopy (SEM) images and Raman spectroscopy reveal that under both the linear antenna and the resonant cavity microwave plasma CVD conditions, grown films are NCD. The diamond nanocrystals sizes vary from 80 to 180 nm, grown by both the reactors after few hours of deposition, irrespective of the substrate roughness, whereas their quality (defined by the relative percentage ratios of the Raman sp3 peak intensity to the non-sp3 peak intensity) varies from 33% to 45%, depending on the substrate surface roughness. Such nanocrystals grew into plate-like flat 1-6 mu m size diamond grains after prolonged hours (64-69 h) of CVD growth. It is found specifically that the roughness created by the argon plasma treatment of the silicon substrate surfaces effectively enhances the nucleation and growth behaviour of the diamond films.