Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/43637
Title: Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up-Conversion of Mid-Gap Trap States
Authors: Zeiske, Stefan
Zarrabi, Nasim
Sandberg, Oskar J.
GIELEN, Sam 
MAES, Wouter 
Meredith, Paul
Armin, Ardalan
Issue Date: 2024
Publisher: WILEY-V C H VERLAG GMBH
Source: ADVANCED MATERIALS,
Status: Early view
Abstract: Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of "trap-doping" in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature. A novel strategy for creating shortwave-infrared (SWIR) photo-response in organic photodiodes by utilizing mid-gap states through 'trap-doping' is presented. This involves incorporating small amounts of a guest organic molecule into a semiconducting donor:acceptor host system. A proof-of-concept for a visible-SWIR broadband organic photodiode is demonstrated. image
Notes: Sandberg, OJ; Meredith, P; Armin, A (corresponding author), Swansea Univ Bay Campus, Ctr Integrat Semicond Mat CISM, Sustainable Adv Mat Ser SAM, Fabian Way, Swansea SA1 8EN, Wales.; Sandberg, OJ; Meredith, P; Armin, A (corresponding author), Swansea Univ Bay Campus, Dept Phys, Fabian Way, Swansea SA1 8EN, Wales.; Sandberg, OJ (corresponding author), Abo Akad Univ, Fac Sci & Engn, Phys, Turku 20500, Finland.
oskar.sandberg@abo.fi; paul.meredith@swansea.ac.uk;
ardalan.armin@swansea.ac.uk
Keywords: bulk-heterojunction;mid-gap trap states;organic semiconductors;photodetectors;SWIR;thin films;up-conversion
Document URI: http://hdl.handle.net/1942/43637
ISSN: 0935-9648
e-ISSN: 1521-4095
DOI: 10.1002/adma.202405061
ISI #: 001274733600001
Rights: 2024 The Author(s). Advanced Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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