Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/47646
Title: Unveiling a Two-Electron Reaction Pathway for Electrocatalytic CO2 Reduction on Boron-Doped Diamonds: A First-Principles Calculation
Authors: Zhang , Chuyan
Chen, Bin
Zhai, Zhaofeng
Lv, Chengcheng
Liu , Lusheng
Yang , Bing
YANG, Nianjun 
Jiang , Xin
Gao, Nan
Huang, Nan
Issue Date: 2025
Publisher: AMER CHEMICAL SOC
Source: Langmuir, 41 (42) , p. 28626 -28636
Status: Early view
Abstract: Converting excessive CO2 molecules into formic acid (HCOOH) as a liquid fuel and hydrogen storage carrier using a sustainable electrochemical method has received enormous attentions. However, the reaction mechanism during this two-electron reaction pathway is still controversial. Inspired by the high selectivity toward HCOOH on the boron-doped diamond (BDD) electrode, this work calculates the adsorption of the CO2 molecule and first two-electron reaction pathway on BDD with different B doping configurations by the density functional theory method. The results show that CO2 molecules are more readily adsorbed on the surface B doping sites with charge transfer between B-O bonding. And the total overpotential of the first two-electron reaction pathway displays a Volcano relationship with the Gibbs energy of the *CO2-*COOH step. The partially sp2-C hybridized (111) (2 x 1) configuration exhibits the lowest overpotential of 0.81 eV and the best CO2 reduction performance toward the HCOOH product. Furthermore, the dynamic kinetics of the *CO2-*COOH step is investigated by the climbing image-nudged elastic band method under the external electric field. The negative electric field of -0.4 eV/& Aring; promotes the adsorption of CO2 and *H but inhibits the migration of *H with an energy barrier of 4.34 eV. This work elucidates the decision factor of high selectivity toward the HCOOH product on the BDD electrode and provides a comprehensive understanding of two-electron reaction pathway mechanisms.
Notes: Huang, N (corresponding author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.; Huang, N (corresponding author), Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China.; Gao, N (corresponding author), Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China.
gaon@jlu.edu.cn; nhuang@imr.ac.cn
Document URI: http://hdl.handle.net/1942/47646
ISSN: 0743-7463
e-ISSN: 1520-5827
DOI: 10.1021/acs.langmuir.5c03888
ISI #: 001593274100001
Rights: 2025 American Chemical Society
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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