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http://hdl.handle.net/1942/4894
Title: | Electrical spin injection in a ferromagnetic metal/insulator/semiconductor tunnel heterostructure | Authors: | Motsnyi, V.F. Safarov, V.I. van Dorpe, P. Das, J. van Roy, W. Goovaerts, E. Borghs, G. DE BOECK, Joan |
Issue Date: | 2003 | Publisher: | KLUWER ACADEMIC/PLENUM PUBL | Source: | Journal of superconductivity, 16(4). p. 671-678 | Abstract: | We demonstrate experimentally the electrical spin injection from a ferromagnetic metal/tunnel barrier contact into a semiconductor III-V heterostructure. The injected electrons have an in-plane spin orientation. We show that by applying an oblique external magnetic field this spin orientation can be manipulated within the semiconductor, and a nonzero perpendicular spin component arises. This perpendicular component can be easily monitored by optical means (circular polarization of the emitted light). In a CoFe/AlOx/(Al,Ga)As/GaAs heterostructure we observe injected spin polarization in access of 9% at 80 K and optimized structures have recently shown spin injection up to room temperature. | Document URI: | http://hdl.handle.net/1942/4894 | ISSN: | 0896-1107 | DOI: | 10.1023/A:1025305705087 | ISI #: | 000184875500009 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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