An organic FET structure for unconventional substrates

Abstract

A structure for organic TFTs suitable for being transferred on unusual substrates is described in each technological step. The proposed device consists in a "bottom-structure" assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage is to avoid the substrate because the insulator itself is able to support the whole structure. For this reason, application to any kind of substrates after the built-in process is possible.