Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/5719
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dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorSTALS, Lambert-
dc.contributor.authord' Haeger, V.-
dc.date.accessioned2007-12-20T16:01:26Z-
dc.date.available2007-12-20T16:01:26Z-
dc.date.issued1996-
dc.identifier.citationProceedings of the Materials Research Symposium, San Diego (USA), 9-12 April 1996. p. 133-140.-
dc.identifier.urihttp://hdl.handle.net/1942/5719-
dc.titleCharacterization of the early stages of electromigration in Al-based metal lines by means of a high resloution resistance monitoring technique based on an extremely stable ambient temperature-
dc.typeProceedings Paper-
dc.identifier.epage140-
dc.identifier.spage133-
local.type.specifiedProceedings Paper-
dc.bibliographicCitation.oldjcat-
local.bibliographicCitation.btitleProceedings of the Materials Research Symposium, San Diego (USA), 9-12 April 1996-
item.fullcitationDE CEUNINCK, Ward; DE SCHEPPER, Luc; STALS, Lambert & d' Haeger, V. (1996) Characterization of the early stages of electromigration in Al-based metal lines by means of a high resloution resistance monitoring technique based on an extremely stable ambient temperature. In: Proceedings of the Materials Research Symposium, San Diego (USA), 9-12 April 1996. p. 133-140..-
item.accessRightsClosed Access-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorSTALS, Lambert-
item.contributord' Haeger, V.-
item.fulltextNo Fulltext-
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