Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/5748
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dc.contributor.authorProost, J.-
dc.contributor.authorWitvrouw, A.-
dc.contributor.authorCOSEMANS, Patrick Peter-
dc.contributor.authorRoussel, Ph.-
dc.contributor.authorMaex, Karen-
dc.date.accessioned2007-12-20T16:01:42Z-
dc.date.available2007-12-20T16:01:42Z-
dc.date.issued1997-
dc.identifier.citationMicroelectronic engineering, 33(1-4). p. 137-147-
dc.identifier.urihttp://hdl.handle.net/1942/5748-
dc.description.abstractSubstrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm Al (0.5wt% Cu)-films on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0±0.3 eV and an average athermal flow stress of 600±200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.-
dc.language.isoen-
dc.publisherElsevier Science B.V.-
dc.titleStress relaxation in Al(Cu) thin films-
dc.typeJournal Contribution-
dc.identifier.epage147-
dc.identifier.issue1-4-
dc.identifier.spage137-
dc.identifier.volume33-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcat-
dc.identifier.doi10.1016/S0167-9317(96)00039-1-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.fullcitationProost, J.; Witvrouw, A.; COSEMANS, Patrick Peter; Roussel, Ph. & Maex, Karen (1997) Stress relaxation in Al(Cu) thin films. In: Microelectronic engineering, 33(1-4). p. 137-147.-
item.contributorCOSEMANS, Patrick Peter-
item.contributorProost, J.-
item.contributorMaex, Karen-
item.contributorRoussel, Ph.-
item.contributorWitvrouw, A.-
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