InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6132

Title:	InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
Authors:	Dobbelaere, W. DE BOECK, Joan Heremans, P. Mertens, R. Borghs, G. Luyten, W. van Landuyt, J.
Issue Date:	1992
Source:	Applied physics letters, 60(26). p. 3256-3258
Abstract:	We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 µm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.
Document URI:	http://hdl.handle.net/1942/6132
DOI:	10.1063/1.106711
Type:	Journal Contribution
Appears in Collections:	Research publications

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