Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6194
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dc.contributor.authorvan Dorpe, P.-
dc.contributor.authorMotsnyi, V.F.-
dc.contributor.authorNijboer, M.-
dc.contributor.authorGoovaerts, E.-
dc.contributor.authorSafarov, V.I.-
dc.contributor.authorDas, J-
dc.contributor.authorvan Roy, W.-
dc.contributor.authorBorghs, G.-
dc.contributor.authorDE BOECK, Joan-
dc.date.accessioned2007-12-20T16:05:50Z-
dc.date.available2007-12-20T16:05:50Z-
dc.date.issued2003-
dc.identifier.citationJapanese journal of applied physics, 42(5B). p. L502-L504-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/1942/6194-
dc.description.abstractWe demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations. of at least 24% at 80 K and 12% at room temperature.-
dc.language.isoen-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subject.otherspin injection, spintronics, room temperature, tunnel barrier-
dc.titleHighly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode-
dc.typeJournal Contribution-
dc.identifier.epageL504-
dc.identifier.issue5B-
dc.identifier.spageL502-
dc.identifier.volume42-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1143/JJAP.42.L502-
dc.identifier.isi000183745300003-
item.fulltextNo Fulltext-
item.contributorvan Dorpe, P.-
item.contributorMotsnyi, V.F.-
item.contributorNijboer, M.-
item.contributorGoovaerts, E.-
item.contributorSafarov, V.I.-
item.contributorDas, J-
item.contributorvan Roy, W.-
item.contributorBorghs, G.-
item.contributorDE BOECK, Joan-
item.fullcitationvan Dorpe, P.; Motsnyi, V.F.; Nijboer, M.; Goovaerts, E.; Safarov, V.I.; Das, J; van Roy, W.; Borghs, G. & DE BOECK, Joan (2003) Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode. In: Japanese journal of applied physics, 42(5B). p. L502-L504.-
item.accessRightsClosed Access-
crisitem.journal.issn0021-4922-
crisitem.journal.eissn1347-4065-
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