Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6461
Title: Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
Authors: Motsnyi, V.F.
DE BOECK, Joan 
Das, J.
van Roy, W.
Borghs, G.
Goovaerts, E.
Safarov, V.I.
Issue Date: 2002
Source: Applied physics letters, 81. p. 265-267
Abstract: We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III–V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED.
Document URI: http://hdl.handle.net/1942/6461
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.1491010
ISI #: 000176487400027
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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