Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/6461

Title:	Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
Authors:	Motsnyi, V.F. DE BOECK, Joan Das, J. van Roy, W. Borghs, G. Goovaerts, E. Safarov, V.I.
Issue Date:	2002
Source:	Applied physics letters, 81. p. 265-267
Abstract:	We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III–V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED.
Document URI:	http://hdl.handle.net/1942/6461
ISSN:	0003-6951
e-ISSN:	1077-3118
DOI:	10.1063/1.1491010
ISI #:	000176487400027
Category:	A1
Type:	Journal Contribution
Appears in Collections:	Research publications

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