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http://hdl.handle.net/1942/6461
Title: | Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure | Authors: | Motsnyi, V.F. DE BOECK, Joan Das, J. van Roy, W. Borghs, G. Goovaerts, E. Safarov, V.I. |
Issue Date: | 2002 | Source: | Applied physics letters, 81. p. 265-267 | Abstract: | We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III–V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED. | Document URI: | http://hdl.handle.net/1942/6461 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.1491010 | ISI #: | 000176487400027 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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