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http://hdl.handle.net/1942/6519
Title: | InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | Authors: | DE BOECK, Joan Dobbelaere, W. Heremans, P. Mertens, R. Borghs, G. Luyten, W. van Landuyt, J. |
Issue Date: | 1992 | Source: | Applied physics letters, 60(7). p. 868-870 | Abstract: | InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 cm2 for InAs/GaAs and 1500 cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95 µm with Johnson noise limited detectivities D* of 7.0×1011 cm Hz1/2/W for InAs/GaAs and 5.8×1011 cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics. | Document URI: | http://hdl.handle.net/1942/6519 | DOI: | 10.1063/1.106490 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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