Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7225
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDREESEN, Raf-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorGroeseneken, G.-
dc.date.accessioned2007-12-20T16:14:13Z-
dc.date.available2007-12-20T16:14:13Z-
dc.date.issued1997-
dc.identifier.citationProceedings of the 8th European symposium on reliability of electron devices, failure physics and analysis. p. 1533-1536.-
dc.identifier.urihttp://hdl.handle.net/1942/7225-
dc.language.isoen-
dc.titleA high resolution method for measuring hot carrier degradation in matched transistor pairs-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencenameEuropean symposium on reliability of electron devices, failure physics and analysis-
dc.bibliographicCitation.conferencenr8-
dc.identifier.epage1536-
dc.identifier.issue10/11-
dc.identifier.spage1533-
dc.identifier.volume37-
local.type.specifiedProceedings Paper-
dc.bibliographicCitation.oldjcat-
local.bibliographicCitation.btitleProceedings of the 8th European symposium on reliability of electron devices, failure physics and analysis-
item.contributorDREESEN, Raf-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorGroeseneken, G.-
item.accessRightsClosed Access-
item.fullcitationDREESEN, Raf; DE CEUNINCK, Ward; DE SCHEPPER, Luc & Groeseneken, G. (1997) A high resolution method for measuring hot carrier degradation in matched transistor pairs. In: Proceedings of the 8th European symposium on reliability of electron devices, failure physics and analysis. p. 1533-1536..-
item.fulltextNo Fulltext-
Appears in Collections:Research publications
Show simple item record

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.