Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7774
Title: Electrical transport and defect spectroscopy of free standing single crystal CVD diamond prepared from methane rich mixtures
Authors: BOGDAN, Andrey 
BOGDAN, Anna 
DE CEUNINCK, Ward 
HAENEN, Ken 
NESLADEK, Milos 
Issue Date: 2007
Publisher: MATERIALS RESEARCH SOCIETY
Source: Bergonzo, P & Gat, R & Jackman, RB & Nebel, CE (Ed.) DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS. p. 157-163.
Series/Report: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Abstract: Transient photocurrent measurements in the Time-of-Flight(TOF)configuration were used to study the electrical transport in sigle crystalline diamond layers using a Nd:YAG - pumped OPO (2.7 nsec) laser pulse excitation source working at a wavelength of ∼ 218 nm. The amount of collected charge was measured and the hole and electron drift mobilities were determined at room temperature for natural IIa diamond and intrinsic single chrystalline CVD diamond samples. A variation of the laser intensity over several orders of magnitude enabled switching between the so-called "small signal TOF" and "space charge limited current"(SCLC) modes. Experiments were done using electrical fields in the range of 0.05-1.2 V/μm.
Notes: Hasselt Univ, Inst Mat Res, Diepenbeek, B-3590 Belgium.Bogdan, A, Hasselt Univ, Inst Mat Res, Wetenschapspk 1, Diepenbeek, B-3590 Belgium.
Keywords: diamond; electrical properties; photoconductivity
Document URI: http://hdl.handle.net/1942/7774
ISBN: 978-1-55899-913-8
ISI #: 000247400200021
Category: C1
Type: Proceedings Paper
Validations: ecoom 2008
Appears in Collections:Research publications

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