Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/7784
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dc.contributor.authorMOONEN, Rob-
dc.contributor.authorVanmeerbeek, P-
dc.contributor.authorLEKENS, Geert-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorMoens, P.-
dc.contributor.authorBoutsen, J.-
dc.date.accessioned2008-02-01T21:47:01Z-
dc.date.available2008-02-01T21:47:01Z-
dc.date.issued2007-
dc.identifier.citationMahapatra, S Radhakrishnan, MK (Ed.) IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS. p. 288-291.-
dc.identifier.isbn978-1-4244-1014-9-
dc.identifier.urihttp://hdl.handle.net/1942/7784-
dc.description.abstractThin layers of sillicon dioxide used as a dielectric for capacitors or as the gate oxide for a MOS semiconductor device are subject to a wear-out mechanism knwon as time-dependent dielectric breakdown (TDDB). This physical failure mechanism has always been of notable reliability matter in semiconductor industry because of the incessant tendency towards smaller devices. In this paper, the intrinsic oxide lifetime of 7.2 nm gate oxide capacitors (n-type) has been studied in, a wide electric field ranging from 8.3 to 13.2 MV/cm at high temperatures (up to 240degC). By means of a high resolution/high speed TDDB measurement technique, we performed TDDB tests with constant voltage stress (CVS) at different stress conditions of temperature and voltage. We particularly concentrated on the high temperature aspect of TDDB to answer the demands of new smart power technologies (Tjunc up to 225degC). It was found that the intrinsic oxide breakdown mechanism perfectly matches the anode hole injection (AHI) model (1/EOX model) at these high temperatures. In summary, this physical model is most convenient to extrapolate the intrinsic oxide lifetime from accelerated tests to normal at-use conditions.-
dc.language.isoen-
dc.publisherIEEE-
dc.titleStudy of time-dependent dielectric breakdown on gate oxide capacitors at high temperature-
dc.typeProceedings Paper-
local.bibliographicCitation.authorsMahapatra, S Radhakrishnan, MK-
local.bibliographicCitation.conferencename14th International Symposium on the Physical and Failure Analysis of Integrated Circuits-
dc.identifier.epage291-
dc.identifier.spage288-
local.format.pages4-
local.bibliographicCitation.jcatC1-
dc.description.notesHasselt Univ, Inst Mat Res IMO, Diepenbeek, B-3590 Belgium.Moonen, R, Hasselt Univ, Inst Mat Res IMO, Wetenschapspark 1, Diepenbeek, B-3590 Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatC1-
dc.identifier.doi10.1109/IPFA.2007.4378103-
dc.identifier.isi000251130700056-
local.bibliographicCitation.btitleIPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS-
item.validationecoom 2009-
item.fulltextNo Fulltext-
item.contributorMOONEN, Rob-
item.contributorDE CEUNINCK, Ward-
item.contributorBoutsen, J.-
item.contributorVanmeerbeek, P-
item.contributorLEKENS, Geert-
item.contributorMoens, P.-
item.fullcitationMOONEN, Rob; Vanmeerbeek, P; LEKENS, Geert; DE CEUNINCK, Ward; Moens, P. & Boutsen, J. (2007) Study of time-dependent dielectric breakdown on gate oxide capacitors at high temperature. In: Mahapatra, S Radhakrishnan, MK (Ed.) IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS. p. 288-291..-
item.accessRightsClosed Access-
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