Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8233
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLAZEA, Andrada-
dc.contributor.authorMORTET, Vincent-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorGeithner, P.-
dc.contributor.authorRistein, J.-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2008-04-14T12:26:06Z-
dc.date.available2008-04-14T12:26:06Z-
dc.date.issued2008-
dc.identifier.citationCHEMICAL PHYSICS LETTERS, 454(4-6). p. 310-313-
dc.identifier.issn0009-2614-
dc.identifier.urihttp://hdl.handle.net/1942/8233-
dc.description.abstractMicrowave plasma-enhanced chemical vapour deposition (MW PE CVD) growth conditions for preparation of polycrystalline phosphorous-doped diamond layers are presented. The incorporation of substitutional phosphorous was confirmed by low temperature photocurrent (PC) and cathodoluminescence (CL) measurements. The topographical characteristics of thefilms and the relation between the substrate and P-dopedfilm grain orientation were studied by scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The growth process for P-doped layers on (110) oriented polycrystalline diamond was optimised and the best set of parameters differs significantly from the standard conditions used for P-doping of single crystalline (111) oriented diamond surfaces. (c) 2008 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.titleGrowth of polycrystalline phosphorous-doped CVD diamond layers-
dc.typeJournal Contribution-
dc.identifier.epage313-
dc.identifier.issue4-6-
dc.identifier.spage310-
dc.identifier.volume454-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notesHasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. Univ Erlangen Nurnberg, Erlangen, Germany.Haenen, K, Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.ken.haenen@uhasselt.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.cplett.2008.02.030-
dc.identifier.isi000254425200032-
item.fulltextNo Fulltext-
item.contributorLAZEA, Andrada-
item.contributorMORTET, Vincent-
item.contributorD'HAEN, Jan-
item.contributorGeithner, P.-
item.contributorRistein, J.-
item.contributorD'OLIESLAEGER, Marc-
item.contributorHAENEN, Ken-
item.fullcitationLAZEA, Andrada; MORTET, Vincent; D'HAEN, Jan; Geithner, P.; Ristein, J.; D'OLIESLAEGER, Marc & HAENEN, Ken (2008) Growth of polycrystalline phosphorous-doped CVD diamond layers. In: CHEMICAL PHYSICS LETTERS, 454(4-6). p. 310-313.-
item.accessRightsClosed Access-
item.validationecoom 2009-
crisitem.journal.issn0009-2614-
crisitem.journal.eissn1873-4448-
Appears in Collections:Research publications
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.