Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8464
Title: Phosphorous doping of microcrystalline CVD diamond using modified conditions
Authors: HAENEN, Ken 
LAZEA, Andrada 
MORTET, Vincent 
D'HAEN, Jan 
Geithner, P
Ristein, J
Issue Date: 2008
Publisher: MATERIALS RESEARCH SOCIETY
Source: Nebel, CE & Jackman, RB & Nemanich, RJ & Nesladek, M (Ed.) DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS II. p. 49-55.
Series/Report: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Abstract: Phosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation;vas obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.
Notes: Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium.
Document URI: http://hdl.handle.net/1942/8464
ISBN: 978-1-55899-986-2
ISI #: 000257510500006
Category: C1
Type: Proceedings Paper
Validations: ecoom 2009
Appears in Collections:Research publications

Files in This Item:
File Description SizeFormat 
Phosphorous.pdf1.7 MBAdobe PDFView/Open
Show full item record

Page view(s)

50
checked on May 17, 2022

Download(s)

138
checked on May 17, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.