Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/8995
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dc.contributor.authorHARDY, An-
dc.contributor.authorVan Elshocht, S.-
dc.contributor.authorAdelmann, C.-
dc.contributor.authorConard, T.-
dc.contributor.authorFranquet, A.-
dc.contributor.authorDOUHERET, Olivier-
dc.contributor.authorHAELDERMANS, Ilse-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorDe Gendt, S.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorHeyns, M.-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorMULLENS, Jules-
dc.date.accessioned2008-12-09T08:58:48Z-
dc.date.available2008-12-09T08:58:48Z-
dc.date.issued2008-
dc.identifier.citationTHIN SOLID FILMS, 516(23). p. 8343-8351-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/1942/8995-
dc.description.abstractZirconia ultrathin films were deposited by aqueous chemical solution deposition, using citratoperoxo-Zr(IV) precursors with different citric acid content. The precursor synthesis, thermal decomposition and crystallization of oxide powders were studied. This showed an effect of the citric acid content in every stage. The precursors were applied for the deposition of uniform, ultrathin films (<30 nm thickness) as well. Tetragonal ZrO2 crystallized starting from 500 degrees C for thin films with a thickness of 10 nm. This was independent of the citric acid content in the precursor. The topography after annealing at 600 degrees C was also similar. However, annealing at higher temperatures led to coarser grain size. The dielectric constant was high (similar to 21-22) and comparable to ZrO2 deposited by atomic layer deposition. (C) 2008 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subject.otherZrO2; Aqueous solution-gel route; Citric acid content; Ultrathin films; High-k-
dc.titleAqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric application-
dc.typeJournal Contribution-
dc.identifier.epage8351-
dc.identifier.issue23-
dc.identifier.spage8343-
dc.identifier.volume516-
local.format.pages9-
local.bibliographicCitation.jcatA1-
dc.description.notes[Hardy, A.; Haeldermans, I.; Van Bael, M. K.; Mullens, J.] Hasselt Univ, Lab Inorgan & Phys Chem, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Van Elshocht, S.; Adelmann, C.; Conard, T.; Franquet, A.; De Gendt, S.; Caymax, M.; Heyns, M.] IMEC VZW, Heverlee, Belgium. [Douheret, O.; D'Haen, J.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Hardy, A.] XIOS Hogesch Limburg, Diepenbeek, Belgium. [D'Haen, J.] Catholic Univ Louvain, Dept Chem, B-3030 Heverlee, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.tsf.2008.04.017-
dc.identifier.isi000260579800021-
item.fullcitationHARDY, An; Van Elshocht, S.; Adelmann, C.; Conard, T.; Franquet, A.; DOUHERET, Olivier; HAELDERMANS, Ilse; D'HAEN, Jan; De Gendt, S.; Caymax, M.; Heyns, M.; D'OLIESLAEGER, Marc; VAN BAEL, Marlies & MULLENS, Jules (2008) Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric application. In: THIN SOLID FILMS, 516(23). p. 8343-8351.-
item.validationecoom 2009-
item.fulltextWith Fulltext-
item.contributorHARDY, An-
item.contributorVan Elshocht, S.-
item.contributorAdelmann, C.-
item.contributorConard, T.-
item.contributorFranquet, A.-
item.contributorDOUHERET, Olivier-
item.contributorHAELDERMANS, Ilse-
item.contributorD'HAEN, Jan-
item.contributorDe Gendt, S.-
item.contributorCaymax, M.-
item.contributorHeyns, M.-
item.contributorD'OLIESLAEGER, Marc-
item.contributorVAN BAEL, Marlies-
item.contributorMULLENS, Jules-
item.accessRightsClosed Access-
crisitem.journal.issn0040-6090-
crisitem.journal.eissn1879-2731-
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