Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/927
Title: Growth and characterization of near-atomically flat, thick homoepitaxial CVD diamond films
Authors: BOGDAN, Anna 
NESLADEK, Milos 
D'HAEN, Jan 
Maes, J.
Moshchalkov, V.V.
HAENEN, Ken 
D'OLIESLAEGER, Marc 
Issue Date: 2005
Publisher: Wiley - VCH
Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202(11). p. 2066-2072
Abstract: Diamond films were grown in an ASTeX MW PE CVD reactor. The effect of pre-growth etching with a O2/H2 plasma and the influence of the methane concentration on growth on type Ib (100) HPHT synthetic diamonds were investigated. By controlling step flow growth we were able to prepare optical quality thick diamond films, free of hillocks and unepitaxial crystallites, with a relatively high growth rate of 4 to 5 µm/h using higher pressures and methane concentrations than standard growth conditions in combination with a modified substrate holder. All diamond films were characterized by optical microscopy, SEM, AFM and Raman spectroscopy. The mean roughness (Rms) of the films grown with a thickness of 120 µm was approximately 0.5 to 0.8 nm for scanning regions of 5 × 5 µm2. For the first time nearatomically flat films thicker than 200 µm could be prepared.
Keywords: Wide Band Gap Materials
Document URI: http://hdl.handle.net/1942/927
ISSN: 0031-8965
DOI: 10.1002/pssa.200561930
ISI #: 000231925500007
Category: A1
Type: Journal Contribution
Validations: ecoom 2006
Appears in Collections:Research publications

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