In pursuit of "super"high-k ternary oxides: aqueous CSD and material properties

Abstract

Important material properties of dielectric oxide films fabricated by aqueous chemical solution deposition, such as crystallization, topography, contamination and interfacial layer were evaluated and related to the films’ dielectric properties. Functional ultrathin films (<20 nm thickness) of zirconia, barium zirconate and strontium niobate were deposited. These films were all subjected to the same pyrolysis treatment, based on the high similarity of their precursors’ thermal decomposition behavior. The evolution of the chemical purity as a function of temperature and the effect of annealing on the interfacial SiO2 layer was studied by grazing angle ATR-FTIR. The crystallization behavior was dependent on film thickness and composition as shown by high temperature XRD. C-V characterization demonstrated a k-value in the same order of magnitude as for the ZrO2 reference material. This is lower than the bulk material’s value, thus leaving room for further optimization of the current materials or alternatively selection of other material compositions.