Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/9694
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Claes, M. | - |
dc.contributor.author | Le, Q. T. | - |
dc.contributor.author | Keldermans, J. | - |
dc.contributor.author | KESTERS, Els | - |
dc.contributor.author | Lux, M. | - |
dc.contributor.author | Franquet, A. | - |
dc.contributor.author | Vereecke, G. | - |
dc.contributor.author | Mertens, P.W. | - |
dc.contributor.author | Frank, M.M. | - |
dc.contributor.author | CARLEER, Robert | - |
dc.contributor.author | ADRIAENSENS, Peter | - |
dc.contributor.author | VANDERZANDE, Dirk | - |
dc.date.accessioned | 2009-07-29T14:29:35Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Mertens, P. & Meuris, M. & Heyns, M. (Ed.) ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII. p. 325-328. | - |
dc.identifier.issn | 1012-0394 | - |
dc.identifier.uri | http://hdl.handle.net/1942/9694 | - |
dc.description.abstract | In new semiconductor technology generations, with BEOL feature sizes shrinking to 65nm and below, the amount of damage induced by plama etch and ash processes to porous low-k materials is becoming an issue. The k-value degradation from densification and chemical modification of the low-k is generally unacceptable, while the removal of the damaged layer may affect critical dimension(CD)control to be severely taken into account in the design. Consequently, all-wet processes are gaining renewed interest for the removal of post-etch photoresist(PR). However, specifications on material loss and k-value integrity considerably reduce the operating space for a purely wet-chemical clean. The composition of post-etch PR is strongly dependent on integration scheme, etch plasma chemistry and materials used. PR composition in turn determines its cleanability. Hence, the identification of a chemical solution that is capable of removing modified PR layers greatly benefits from a thorough chemical characterization of these layers. In the present work, PR layers are characterized by spectroscopic techniques commonly used for semiconductor/wafer analysis, as well as by polymer science characterization techiques less frequently employed in silicon technology development. Cleans based on dissolution by solvents and physical forces(megasonic) are evaluated that comply with requirements on materials loss. | - |
dc.language.iso | en | - |
dc.publisher | TRANS TECH PUBLICATIONS LTD | - |
dc.relation.ispartofseries | SOLID STATE PHENOMENA | - |
dc.subject.other | post-etch photoresist; low-k; BEOL; polymer characterization; solvents; megasonic | - |
dc.title | Photoresist characterization and wet strip after low-k dry etch | - |
dc.type | Proceedings Paper | - |
local.bibliographicCitation.authors | Mertens, P. | - |
local.bibliographicCitation.authors | Meuris, M. | - |
local.bibliographicCitation.authors | Heyns, M. | - |
local.bibliographicCitation.conferencename | 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) | - |
dc.bibliographicCitation.conferencenr | 8 | - |
local.bibliographicCitation.conferenceplace | Antwerp, BELGIUM, Sep 18-20, 2006 | - |
dc.identifier.epage | 328 | - |
dc.identifier.spage | 325 | - |
dc.identifier.volume | 134 | - |
local.format.pages | 4 | - |
local.bibliographicCitation.jcat | C1 | - |
dc.description.notes | [Claes, M.; Le, Q. T.; Kesters, E.; Lux, M.; Franquet, A.; Vereecke, G.; Mertens, P. W.] IMEC VZW, B-3001 Louvain, Belgium. | - |
local.type.refereed | Refereed | - |
local.type.specified | Proceedings Paper | - |
dc.bibliographicCitation.oldjcat | C1 | - |
dc.identifier.isi | 000253389300075 | - |
local.bibliographicCitation.btitle | ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII | - |
item.accessRights | Closed Access | - |
item.fullcitation | Claes, M.; Le, Q. T.; Keldermans, J.; KESTERS, Els; Lux, M.; Franquet, A.; Vereecke, G.; Mertens, P.W.; Frank, M.M.; CARLEER, Robert; ADRIAENSENS, Peter & VANDERZANDE, Dirk (2008) Photoresist characterization and wet strip after low-k dry etch. In: Mertens, P. & Meuris, M. & Heyns, M. (Ed.) ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII. p. 325-328.. | - |
item.contributor | Claes, M. | - |
item.contributor | Le, Q. T. | - |
item.contributor | Keldermans, J. | - |
item.contributor | KESTERS, Els | - |
item.contributor | Lux, M. | - |
item.contributor | Franquet, A. | - |
item.contributor | Vereecke, G. | - |
item.contributor | Mertens, P.W. | - |
item.contributor | Frank, M.M. | - |
item.contributor | CARLEER, Robert | - |
item.contributor | ADRIAENSENS, Peter | - |
item.contributor | VANDERZANDE, Dirk | - |
item.fulltext | No Fulltext | - |
item.validation | ecoom 2010 | - |
Appears in Collections: | Research publications |
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.