Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9768
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBenMoussa, A.-
dc.contributor.authorSoltani, A.-
dc.contributor.authorSchuehle, U.-
dc.contributor.authorHAENEN, Ken-
dc.contributor.authorChong, Y. M.-
dc.contributor.authorZhang, W. J.-
dc.contributor.authorDahal, R.-
dc.contributor.authorLin, J. Y.-
dc.contributor.authorJiang, H. X.-
dc.contributor.authorBarkad, H.A.-
dc.contributor.authorBENMOUSSA, Boumediene-
dc.contributor.authorBolsee, D.-
dc.contributor.authorHermans, C.-
dc.contributor.authorKroth, U.-
dc.contributor.authorLaubis, C.-
dc.contributor.authorMORTET, Vincent-
dc.contributor.authorDe Jaeger, J. C.-
dc.contributor.authorGiordanengo, B.-
dc.contributor.authorRichter, M.-
dc.contributor.authorScholze, F.-
dc.contributor.authorHochedez, J. F.-
dc.date.accessioned2009-08-19T08:39:37Z-
dc.date.availableWITHHELD_ONE_YEAR-
dc.date.issued2009-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, 18(5-8). p. 860-864-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/1942/9768-
dc.description.abstractFuture missions for space astronomy and solar research require innovative vacuum ultraviolet (VUV) photodetectors. Present UV and VUV detectors exhibit serious limitations in performance, technology complexity and lifetime stability. New developments of metal-semiconductor-metal (MSM) solar-blind photodetectors based on diamond, cubic boron nitride (c-BN), and wurtzite aluminum nitride (AlN) are reported. In the wavelength range of interest. the characteristics of the MSM photodetectors present extremely low dark current. high breakdown voltage. and good responsivity. Diamond, c-BN, and AlN MSM photodetectors are sensitive and stable under UV irradiation. They show a 200 nm to 400 nm rejection ratio of more than four orders of magnitude and demonstrate the advantages of wide band gap materials for VUV radiation detection in space. (C) 2008 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.subject.otherUV photodetector; MSM; WBGM; Solarblind-
dc.titleRecent developments of wide-bandgap semiconductor based UV sensors-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencename19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Garbide-
local.bibliographicCitation.conferenceplaceSitges, SPAIN, SEP 07-11, 2008-
dc.identifier.epage864-
dc.identifier.issue5-8-
dc.identifier.spage860-
dc.identifier.volume18-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[BenMoussa, A.; Giordanengo, B.; Hochedez, J. F.] STCE, Royal Observ Belgium, B-1180 Brussels, Belgium. [Soltani, A.; Barkad, H. A.; De Jaeger, J. C.] CNRS, IEMN 8520, F-59652 Villeneuve Dascq, France. [Schuehle, U.] Max Planck Inst Sonnensyst Forsch, D-37191 Katlenburg Lindau, Germany. [Haenen, K.; BenMoussa, B.; Mortet, V.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Chong, Y. M.; Zhang, W. J.] COSDAF, Hong Kong, Hong Kong, Peoples R China. [Chong, Y. M.; Zhang, W. J.] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China. [Dahal, R.; Lin, J. Y.; Jiang, H. X.] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA. [Lin, J. Y.; Jiang, H. X.] Texas Tech Univ, Nanotech Ctr, Lubbock, TX 79409 USA. [Lin, J. Y.; Jiang, H. X.] Texas Tech Univ, Dept ECE, Lubbock, TX 79409 USA. [Bolsee, D.; Hermans, C.] BISA, B-1180 Brussels, Belgium. [Kroth, U.; Laubis, C.; Richter, M.; Scholze, F.] Phys Tech Bundesanstalt, D-10587 Berlin, Germany.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.diamond.2008.11.013-
dc.identifier.isi000267737000039-
item.fulltextWith Fulltext-
item.fullcitationBenMoussa, A.; Soltani, A.; Schuehle, U.; HAENEN, Ken; Chong, Y. M.; Zhang, W. J.; Dahal, R.; Lin, J. Y.; Jiang, H. X.; Barkad, H.A.; BENMOUSSA, Boumediene; Bolsee, D.; Hermans, C.; Kroth, U.; Laubis, C.; MORTET, Vincent; De Jaeger, J. C.; Giordanengo, B.; Richter, M.; Scholze, F. & Hochedez, J. F. (2009) Recent developments of wide-bandgap semiconductor based UV sensors. In: DIAMOND AND RELATED MATERIALS, 18(5-8). p. 860-864.-
item.accessRightsOpen Access-
item.contributorBenMoussa, A.-
item.contributorLin, J. Y.-
item.contributorDe Jaeger, J. C.-
item.contributorSchuehle, U.-
item.contributorDahal, R.-
item.contributorZhang, W. J.-
item.contributorChong, Y. M.-
item.contributorLaubis, C.-
item.contributorGiordanengo, B.-
item.contributorBarkad, H.A.-
item.contributorKroth, U.-
item.contributorMORTET, Vincent-
item.contributorHAENEN, Ken-
item.contributorSoltani, A.-
item.contributorScholze, F.-
item.contributorHermans, C.-
item.contributorJiang, H. X.-
item.contributorBENMOUSSA, Boumediene-
item.contributorBolsee, D.-
item.contributorRichter, M.-
item.contributorHochedez, J. F.-
item.validationecoom 2010-
crisitem.journal.issn0925-9635-
crisitem.journal.eissn1879-0062-
Appears in Collections:Research publications
Files in This Item:
File Description SizeFormat 
3.pdfPublished version763.93 kBAdobe PDFView/Open
Show simple item record

SCOPUSTM   
Citations

69
checked on Sep 3, 2020

WEB OF SCIENCETM
Citations

76
checked on Jun 29, 2022

Page view(s)

48
checked on Jul 4, 2022

Download(s)

256
checked on Jul 4, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.