Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9820
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dc.contributor.authorHARDY, An-
dc.contributor.authorAdelmann, C.-
dc.contributor.authorVan Elshocht, S.-
dc.contributor.authorVAN DEN RUL, Heidi-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorDe Gendt, S.-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorHeyns, M.-
dc.contributor.authorKittl, J.A.-
dc.contributor.authorMULLENS, Jules-
dc.date.accessioned2009-08-19T13:04:44Z-
dc.date.availableWITHHELD_ONE_YEAR-
dc.date.issued2009-
dc.identifier.citationAPPLIED SURFACE SCIENCE, 255(17). p. 7812-7817-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/1942/9820-
dc.description.abstractGrazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf4+, Sc3+ and Dy3+ oxides, due to its high surface sensitivity. The (multi) metal oxides studied, are of interest as high-k dielectrics. Important properties affecting the permittivity, such as the amorphous or crystalline phase and interfacial reactions, are characterized. Dy2O3 is prone to silicate formation on SiO2/Si substrates, which is expressed in DyScO3 as well, but suppressed in HfDyOx. Sc2O3, HfScOx and HfO2 were found to be stable in contact with SiO2/Si. Deposition of HfO2 in between Dy2O3 or DyScO3 and SiO2, prevents silicate formation, showing a buffer-like behavior for the HfO2. Doping of HfO2 with Dy or Sc prevents monoclinic phase crystallization. Instead, a cubic phase is obtained, which allows a higher permittivity of the films. The phase remains stable after anneal at high temperature. (c) 2009 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subject.otherATR-FTIR; Hafnia; Scandate; Rare earth; High permittivity-
dc.titleStudy of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy-
dc.typeJournal Contribution-
dc.identifier.epage7817-
dc.identifier.issue17-
dc.identifier.spage7812-
dc.identifier.volume255-
local.format.pages6-
local.bibliographicCitation.jcatA1-
dc.description.notes[Hardy, A.; Van den Rul, H.; Van Bael, M. K.; Mullens, J.] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium. [Hardy, A.; Van den Rul, H.; Van Bael, M. K.; D'Olieslaeger, M.] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium. [Adelmann, C.; Van Elshocht, S.; De Gendt, S.; Heyns, M.; Kittl, J. A.] IMEC VZW, Heverlee, Belgium. [D'Olieslaeger, M.] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [De Gendt, S.; Heyns, M.] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.apsusc.2009.04.184-
dc.identifier.isi000266567400061-
item.fullcitationHARDY, An; Adelmann, C.; Van Elshocht, S.; VAN DEN RUL, Heidi; VAN BAEL, Marlies; De Gendt, S.; D'OLIESLAEGER, Marc; Heyns, M.; Kittl, J.A. & MULLENS, Jules (2009) Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy. In: APPLIED SURFACE SCIENCE, 255(17). p. 7812-7817.-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
item.validationecoom 2010-
item.contributorVan Elshocht, S.-
item.contributorAdelmann, C.-
item.contributorHARDY, An-
item.contributorMULLENS, Jules-
item.contributorHeyns, M.-
item.contributorDe Gendt, S.-
item.contributorD'OLIESLAEGER, Marc-
item.contributorVAN DEN RUL, Heidi-
item.contributorKittl, J.A.-
item.contributorVAN BAEL, Marlies-
crisitem.journal.issn0169-4332-
crisitem.journal.eissn1873-5584-
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