Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/9836
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dc.contributor.authorLAZEA, Andrada-
dc.contributor.authorBarjon, Julien-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorMORTET, Vincent-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorHAENEN, Ken-
dc.date.accessioned2009-08-20T12:41:51Z-
dc.date.issued2009-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, 105(8), (ART N° 083545)-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/1942/9836-
dc.description.abstractThe incorporation efficiency of phosphorus was studied as a function of the surface orientation of grains in (110)-textured polycrystalline chemical vapor deposited diamond. Cathodoluminescence mapping of such films exhibits large local differences in relative intensities stemming from P-bound and free excitons. Combined with electron backscattering diffraction mapping, these data allow assessing of the donor concentration as a function of the grain orientation. While [P] can vary between 10(15) and >10(18) cm(-3) within one film, misorientation angles of more than 10 degrees with respect to the exact [110] axis assure an enhanced incorporation of P with concentrations surpassing 5x10(17) cm(-3). The role of the surface morphology in the observation of these large incorporation differences is explained.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA-
dc.subject.othercathodoluminescence; chemical vapour deposition; diamond; electron diffraction; elemental semiconductors; excitons; phosphorus; semiconductor doping; semiconductor thin films; surface morphology; texture; DOPED CVD DIAMOND; GROWTH; SURFACE; FILMS-
dc.titleIncorporation of phosphorus donors in (110)-textured polycrystalline diamond-
dc.typeJournal Contribution-
dc.identifier.issue8-
dc.identifier.volume105-
local.format.pages3-
local.bibliographicCitation.jcatA1-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
local.bibliographicCitation.artnr083545-
dc.identifier.doi10.1063/1.3116736-
dc.identifier.isi000268064700071-
item.fulltextWith Fulltext-
item.contributorLAZEA, Andrada-
item.contributorBarjon, Julien-
item.contributorD'HAEN, Jan-
item.contributorMORTET, Vincent-
item.contributorD'OLIESLAEGER, Marc-
item.contributorHAENEN, Ken-
item.fullcitationLAZEA, Andrada; Barjon, Julien; D'HAEN, Jan; MORTET, Vincent; D'OLIESLAEGER, Marc & HAENEN, Ken (2009) Incorporation of phosphorus donors in (110)-textured polycrystalline diamond. In: JOURNAL OF APPLIED PHYSICS, 105(8), (ART N° 083545).-
item.accessRightsRestricted Access-
item.validationecoom 2010-
crisitem.journal.issn0021-8979-
crisitem.journal.eissn1089-7550-
Appears in Collections:Research publications
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