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http://hdl.handle.net/1942/9895
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DC Field | Value | Language |
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dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | LAZEA, Andrada | - |
dc.contributor.author | Barjon, Julien | - |
dc.contributor.author | D'HAEN, Jan | - |
dc.contributor.author | Habka, N. | - |
dc.contributor.author | Teraji, T. | - |
dc.contributor.author | Koizumi, S. | - |
dc.contributor.author | MORTET, Vincent | - |
dc.date.accessioned | 2009-10-07T14:25:52Z | - |
dc.date.available | 2009-10-07T14:25:52Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, 21(36). (ART N° 364204) | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/1942/9895 | - |
dc.description.abstract | The formation and properties of (110)-textured P-doped microcrystalline CVD diamond were studied. Based on several microscopy techniques, with a special emphasis on electron backscattered diffraction, a detailed determination of the grain orientations with respect to the exact [110] axis is given. The different orientations present in the film, in combination with low phosphine concentrations in the gas phase, lead to a variation in P incorporation that can vary over three orders of magnitude, as determined with cathodoluminescence mapping. The role of the surface morphology in the observation of these large incorporation differences is explained. Hall measurements confirm that the films are n-type conductive with a thermal activation energy of 0.56 eV. Based on B-doped substrates, pn junctions were created, showing a rectification ratio of nearly 104 at ± 25 V | - |
dc.description.sponsorship | This work was financially supported by the EU FP6 Marie Curie RTN ‘DRIVE’ (MRTN-CT-2004-512224), the Research Programmes G.0068.07 and G.0430.07 of the Research Foundation—Flanders (FWO), the Methusalem ‘NANO network’ and the IAP-P6/42 project ‘Quantum Effects in Clusters and Nanowires’. | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING | - |
dc.title | P-doped diamond grown on (110)-textured microcrystalline diamond: growth, characterization and devices | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 36 | - |
dc.identifier.volume | 21 | - |
local.format.pages | 10 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Invited Article – Special issue on Science’s gem: diamond science 2009 + Front cover J. Phys.-Condens. Mat. 21/36] | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
local.bibliographicCitation.artnr | 364204 | - |
dc.identifier.doi | 10.1088/0953-8984/21/36/364204 | - |
dc.identifier.isi | 000270523400005 | - |
item.accessRights | Restricted Access | - |
item.validation | ecoom 2010 | - |
item.fulltext | With Fulltext | - |
item.contributor | HAENEN, Ken | - |
item.contributor | LAZEA, Andrada | - |
item.contributor | Barjon, Julien | - |
item.contributor | D'HAEN, Jan | - |
item.contributor | Habka, N. | - |
item.contributor | Teraji, T. | - |
item.contributor | Koizumi, S. | - |
item.contributor | MORTET, Vincent | - |
item.fullcitation | HAENEN, Ken; LAZEA, Andrada; Barjon, Julien; D'HAEN, Jan; Habka, N.; Teraji, T.; Koizumi, S. & MORTET, Vincent (2009) P-doped diamond grown on (110)-textured microcrystalline diamond: growth, characterization and devices. In: JOURNAL OF PHYSICS-CONDENSED MATTER, 21(36). (ART N° 364204). | - |
crisitem.journal.issn | 0953-8984 | - |
crisitem.journal.eissn | 1361-648X | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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JP_CM_Ken_Haenen_Revised_Final.pdf Restricted Access | Published version | 757.29 kB | Adobe PDF | View/Open Request a copy |
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