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http://hdl.handle.net/1942/9907
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DC Field | Value | Language |
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dc.contributor.author | HAENEN, Ken | - |
dc.contributor.author | LAZEA, Andrada | - |
dc.contributor.author | NESLADEK, Milos | - |
dc.contributor.author | Koizumi, Satoshi | - |
dc.date.accessioned | 2009-10-27T10:52:46Z | - |
dc.date.available | 2009-10-27T10:52:46Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 3(6). p. 208-210 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/1942/9907 | - |
dc.description.abstract | The current-voltage characteristics and photoresponse of mesa structured {111}-oriented homoepitaxial CVD diamond p(i)n-junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 10(8) at +/- 10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn-junctions. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Rectifying properties and photoresponse of CVD diamond p(i)n-junctions | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 210 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 208 | - |
dc.identifier.volume | 3 | - |
local.format.pages | 3 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Haenen, Ken; Lazea, Andrada; Nesladek, Milos] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium. [Haenen, Ken; Lazea, Andrada; Nesladek, Milos] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. [Koizumi, Satoshi] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1002/pssr.200903155 | - |
dc.identifier.isi | 000270159700022 | - |
item.contributor | HAENEN, Ken | - |
item.contributor | LAZEA, Andrada | - |
item.contributor | NESLADEK, Milos | - |
item.contributor | Koizumi, Satoshi | - |
item.validation | ecoom 2010 | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
item.fullcitation | HAENEN, Ken; LAZEA, Andrada; NESLADEK, Milos & Koizumi, Satoshi (2009) Rectifying properties and photoresponse of CVD diamond p(i)n-junctions. In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 3(6). p. 208-210. | - |
crisitem.journal.issn | 1862-6254 | - |
crisitem.journal.eissn | 1862-6270 | - |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Haenen_Revised_Final.pdf | Non Peer-reviewed author version | 190.31 kB | Adobe PDF | View/Open |
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