Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11111
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dc.contributor.authorAdelmann, Christoph-
dc.contributor.authorPierreux, Dieter-
dc.contributor.authorSwerts, Johan-
dc.contributor.authorDEWULF, Dann-
dc.contributor.authorHARDY, An-
dc.contributor.authorTIELENS, Hilde-
dc.contributor.authorFranquet, Alexis-
dc.contributor.authorBrijs, Bert-
dc.contributor.authorMoussa, Alain-
dc.contributor.authorConard, Thierry-
dc.contributor.authorVAN BAEL, Marlies-
dc.contributor.authorMaes, Jan W.-
dc.contributor.authorJurczak, Malgorzata-
dc.contributor.authorKittl, Jorge A.-
dc.contributor.authorVan Elshocht, Sven-
dc.date.accessioned2010-09-06T07:17:58Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2010-09-06T07:17:58Z-
dc.date.issued2010-
dc.identifier.citationCHEMICAL VAPOR DEPOSITION, 16 (4-6). p. 170-178-
dc.identifier.issn0948-1907-
dc.identifier.urihttp://hdl.handle.net/1942/11111-
dc.description.abstractFor future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-K material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity with a large band gap. We demonstrate the atomic layer deposition (ALD) of GdxAl2O3 layers using Gd((PrCp)-Pr-i)(3), trimethyl-aluminum (TMA), and H2O or O-3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2-xO3 film properties than O-3, although the accessible composition range is limited because of the hygroscopic nature of Gd2O3.-
dc.description.sponsorshipAn Hardy is a postdoctoral research fellow of the Research Foundation-Flanders (FWO-Vlaanderen). Daan Dewulf is funded by a Ph.D. grant of the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen).-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subject.otherALD; Cyclopentadienyl; Gadolinium aluminate; Gadolinium oxide; High-kappa oxides-
dc.titleAtomic Layer Deposition of Gadolinium Aluminate using Gd((PrCp)-Pr-i)(3), TMA, and O-3 or H2O-
dc.typeJournal Contribution-
dc.identifier.epage178-
dc.identifier.issue4-6-
dc.identifier.spage170-
dc.identifier.volume16-
local.format.pages9-
local.bibliographicCitation.jcatA1-
dc.description.notes[Adelmann, Christoph; Swerts, Johan; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Jurczak, Malgorzata; Kittl, Jorge A.; Van Elshocht, Sven] IMEC VZW, B-3001 Louvain, Belgium. [Pierreux, Dieter; Maes, Jan W.] ASM Belgium, B-3001 Louvain, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium. [Dewulf, Dann; Hardy, An; Van Bael, Marlies K.] IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. adelmann@imec.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1002/cvde.200906833-
dc.identifier.isi000279984800008-
item.validationecoom 2011-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
item.fullcitationAdelmann, Christoph; Pierreux, Dieter; Swerts, Johan; DEWULF, Dann; HARDY, An; TIELENS, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; VAN BAEL, Marlies; Maes, Jan W.; Jurczak, Malgorzata; Kittl, Jorge A. & Van Elshocht, Sven (2010) Atomic Layer Deposition of Gadolinium Aluminate using Gd((PrCp)-Pr-i)(3), TMA, and O-3 or H2O. In: CHEMICAL VAPOR DEPOSITION, 16 (4-6). p. 170-178.-
item.contributorAdelmann, Christoph-
item.contributorTIELENS, Hilde-
item.contributorJurczak, Malgorzata-
item.contributorSwerts, Johan-
item.contributorConard, Thierry-
item.contributorFranquet, Alexis-
item.contributorMoussa, Alain-
item.contributorHARDY, An-
item.contributorPierreux, Dieter-
item.contributorMaes, Jan W.-
item.contributorBrijs, Bert-
item.contributorVAN BAEL, Marlies-
item.contributorKittl, Jorge A.-
item.contributorDEWULF, Dann-
item.contributorVan Elshocht, Sven-
crisitem.journal.issn0948-1907-
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