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Title: Texture of atomic layer deposited ruthenium
Authors: Musschoot, J.
Xie, Q.
Deduytsche, D.
De Keyser, K.
Longrie, D.
Haemers, J.
Van den Berghe, S.
Van Meirhaeghe, R. L.
D'HAEN, Jan 
Detavernier, C.
Issue Date: 2010
Source: MICROELECTRONIC ENGINEERING, 87(10). p. 1879-1883
Abstract: Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(1 0 0) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(1 0 0) were polycrystalline, on TiN they were (0 0 2) oriented. After annealing at 800 degrees C for 60 s, all Ru films were strongly (0 0 2) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nni thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(1 00). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth. (C) 2009 Elsevier B.V. All rights reserved.
Notes: [Musschoot, J.; Deduytsche, D.; De Keyser, K.; Longrie, D.; Haemers, J.; Van Meirhaeghe, R. L.; Detavernier, C.] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium. [Xie, Q.] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. [Van den Berghe, S.] CEN SCK, Lab High & Medium Act, B-2400 Mol, Belgium. [D'Haen, J.] Hasselt Univ, IMO IMOMEC, B-3590 Diepenbeek, Belgium.;
Keywords: Ruthenium; Atomic layer deposition; Texture; Silicide; Ammonia plasma
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ISSN: 0167-9317
e-ISSN: 1873-5568
DOI: 10.1016/j.mee.2009.11.020
ISI #: 000280046900012
Category: A1
Type: Journal Contribution
Validations: ecoom 2011
Appears in Collections:Research publications

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