Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/11119
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dc.contributor.authorMusschoot, J.-
dc.contributor.authorXie, Q.-
dc.contributor.authorDeduytsche, D.-
dc.contributor.authorDe Keyser, K.-
dc.contributor.authorLongrie, D.-
dc.contributor.authorHaemers, J.-
dc.contributor.authorVan den Berghe, S.-
dc.contributor.authorVan Meirhaeghe, R. L.-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorDetavernier, C.-
dc.date.accessioned2010-09-06T08:11:28Z-
dc.date.availableNO_RESTRICTION-
dc.date.available2010-09-06T08:11:28Z-
dc.date.issued2010-
dc.identifier.citationMICROELECTRONIC ENGINEERING, 87(10). p. 1879-1883-
dc.identifier.issn0167-9317-
dc.identifier.urihttp://hdl.handle.net/1942/11119-
dc.description.abstractRuthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(1 0 0) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(1 0 0) were polycrystalline, on TiN they were (0 0 2) oriented. After annealing at 800 degrees C for 60 s, all Ru films were strongly (0 0 2) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nni thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(1 00). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth. (C) 2009 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThe authors thank the IWT Vlaanderen for financial support through the SBO project Metacel. This work was supported in part by the Bilateral Scientific and Technological Cooperation Project Flanders-China (B/06086/01).-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subject.otherRuthenium; Atomic layer deposition; Texture; Silicide; Ammonia plasma-
dc.titleTexture of atomic layer deposited ruthenium-
dc.typeJournal Contribution-
dc.identifier.epage1883-
dc.identifier.issue10-
dc.identifier.spage1879-
dc.identifier.volume87-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notes[Musschoot, J.; Deduytsche, D.; De Keyser, K.; Longrie, D.; Haemers, J.; Van Meirhaeghe, R. L.; Detavernier, C.] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium. [Xie, Q.] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China. [Van den Berghe, S.] CEN SCK, Lab High & Medium Act, B-2400 Mol, Belgium. [D'Haen, J.] Hasselt Univ, IMO IMOMEC, B-3590 Diepenbeek, Belgium. jan.musschoot@ugent.be; christophe.detavernier@ugent.be-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/j.mee.2009.11.020-
dc.identifier.isi000280046900012-
item.fulltextWith Fulltext-
item.fullcitationMusschoot, J.; Xie, Q.; Deduytsche, D.; De Keyser, K.; Longrie, D.; Haemers, J.; Van den Berghe, S.; Van Meirhaeghe, R. L.; D'HAEN, Jan & Detavernier, C. (2010) Texture of atomic layer deposited ruthenium. In: MICROELECTRONIC ENGINEERING, 87(10). p. 1879-1883.-
item.contributorMusschoot, J.-
item.contributorXie, Q.-
item.contributorDeduytsche, D.-
item.contributorDe Keyser, K.-
item.contributorLongrie, D.-
item.contributorHaemers, J.-
item.contributorVan den Berghe, S.-
item.contributorVan Meirhaeghe, R. L.-
item.contributorD'HAEN, Jan-
item.contributorDetavernier, C.-
item.accessRightsRestricted Access-
item.validationecoom 2011-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
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