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Title: | Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers | Authors: | Frigeri, C. Serenyi, M. Khanh, N. Q. Csik, A. Erdelyi, Z. Nasi, L. Beke, D. L. BOYEN, Hans-Gerd |
Issue Date: | 2011 | Publisher: | WILEY-BLACKWELL | Source: | CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880 | Abstract: | A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H(2) do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | Notes: | [Frigeri, C; Nasi, L] CNR IMEM Inst, I-43010 Parma, Italy [Serenyi, M; Khanh, NQ] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary [Csik, A] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary [Erdelyi, Z; Beke, DL] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary [Boyen, HG] Hasselt Univ, Inst Mat Res IMO, Hasselt, Belgium frigeri@imem.cnr.it | Keywords: | hydrogenated a-Si/a-Ge; annealing; structure;hydrogenated a-Si/a-Ge; annealing; structure | Document URI: | http://hdl.handle.net/1942/12207 | ISSN: | 0232-1300 | e-ISSN: | 1521-4079 | DOI: | 10.1002/crat.201000632 | ISI #: | 000293949700027 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2012 |
Appears in Collections: | Research publications |
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