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Title: Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers
Authors: Frigeri, C.
Serenyi, M.
Khanh, N. Q.
Csik, A.
Erdelyi, Z.
Nasi, L.
Beke, D. L.
BOYEN, Hans-Gerhard 
Issue Date: 2011
Source: CRYSTAL RESEARCH AND TECHNOLOGY, 46(8). p. 877-880
Abstract: A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H(2) do. The conclusion is drawn that the structural degradation of a-Si/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Notes: [Frigeri, C; Nasi, L] CNR IMEM Inst, I-43010 Parma, Italy [Serenyi, M; Khanh, NQ] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary [Csik, A] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary [Erdelyi, Z; Beke, DL] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary [Boyen, HG] Hasselt Univ, Inst Mat Res IMO, Hasselt, Belgium
Keywords: hydrogenated a-Si/a-Ge; annealing; structure;hydrogenated a-Si/a-Ge; annealing; structure
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ISSN: 0232-1300
e-ISSN: 1521-4079
DOI: 10.1002/crat.201000632
ISI #: 000293949700027
Category: A1
Type: Journal Contribution
Validations: ecoom 2012
Appears in Collections:Research publications

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