Please use this identifier to cite or link to this item:
Title: Aqueous Solutions for Low-Temperature Photoannealing of Functional Oxide Films: Reaching the 400 degrees C Si-Technology Integration Barrier
Authors: DE DOBBELAERE, Christopher 
Lourdes Calzada, Maria
Jimenez, Ricardo
Ricote, Jesus
Bretos, Inigo
VAN BAEL, Marlies 
Issue Date: 2011
Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 133(33). p. 12922-12925
Abstract: Functional oxide films were obtained at low temperature by combination of aqueous precursors and a UV-assisted annealing process (aqueous photochemical solution deposition). For a PbTiO(3) model system, functional ferroelectric perovskite films were prepared at only 400 degrees C, a temperature compatible with the current Si-technology demands. Intrinsically photosensitive and environmentally friendly aqueous precursors can be prepared for most of the functional multimetal oxides, as additionally demonstrated here for multiferroic BiFeO(3), yielding virtually unlimited possibilities for this low-temperature fabrication technology.
Notes: [De Dobbelaere, C; Mullens, J; Hardy, A; Van Bael, MK] Univ Hasselt, IMEC VZW, Div IMOMEC, Inorgan & Phys Chem Grp,Inst Mat Res, B-3590 Diepenbeek, Belgium [Calzada, ML; Jimenez, R; Ricote, J; Bretos, I] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
Document URI:
ISSN: 0002-7863
e-ISSN: 1520-5126
DOI: 10.1021/ja203553n
ISI #: 000294591300008
Category: A1
Type: Journal Contribution
Validations: ecoom 2012
Appears in Collections:Research publications

Show full item record

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.