Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13012
Title: Impurity impact ionization avalanche in p-type diamond
Authors: MORTET, Vincent 
Soltani, A.
Issue Date: 2011
Publisher: AMER INST PHYSICS
Source: APPLIED PHYSICS LETTERS, 99(20)
Abstract: Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.
Notes: [Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr
Keywords: Physics; Applied; electrical conduction; low temperatures; germanium; breakdown; silicon; films
Document URI: http://hdl.handle.net/1942/13012
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.3662403
ISI #: 000297786500028
Category: A1
Type: Journal Contribution
Validations: ecoom 2012
Appears in Collections:Research publications

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