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http://hdl.handle.net/1942/13012| Title: | Impurity impact ionization avalanche in p-type diamond | Authors: | MORTET, Vincent Soltani, A. |
Issue Date: | 2011 | Publisher: | AMER INST PHYSICS | Source: | APPLIED PHYSICS LETTERS, 99(20) | Abstract: | Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics. | Notes: | [Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr | Keywords: | Physics; Applied; electrical conduction; low temperatures; germanium; breakdown; silicon; films | Document URI: | http://hdl.handle.net/1942/13012 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.3662403 | ISI #: | 000297786500028 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2012 |
| Appears in Collections: | Research publications |
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