Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13012
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dc.contributor.authorMORTET, Vincent-
dc.contributor.authorSoltani, A.-
dc.date.accessioned2012-01-18T09:43:20Z-
dc.date.available2012-01-18T09:43:20Z-
dc.date.issued2011-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 99(20)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/1942/13012-
dc.description.abstractElectrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subject.otherPhysics; Applied; electrical conduction; low temperatures; germanium; breakdown; silicon; films-
dc.titleImpurity impact ionization avalanche in p-type diamond-
dc.typeJournal Contribution-
dc.identifier.issue20-
dc.identifier.volume99-
local.format.pages3-
local.bibliographicCitation.jcatA1-
dc.description.notes[Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr-
local.publisher.placeMELVILLE-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1063/1.3662403-
dc.identifier.isi000297786500028-
item.accessRightsClosed Access-
item.validationecoom 2012-
item.contributorMORTET, Vincent-
item.contributorSoltani, A.-
item.fullcitationMORTET, Vincent & Soltani, A. (2011) Impurity impact ionization avalanche in p-type diamond. In: APPLIED PHYSICS LETTERS, 99(20).-
item.fulltextNo Fulltext-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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