Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/13012Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | MORTET, Vincent | - |
| dc.contributor.author | Soltani, A. | - |
| dc.date.accessioned | 2012-01-18T09:43:20Z | - |
| dc.date.available | 2012-01-18T09:43:20Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, 99(20) | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/1942/13012 | - |
| dc.description.abstract | Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics. | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject.other | Physics; Applied; electrical conduction; low temperatures; germanium; breakdown; silicon; films | - |
| dc.title | Impurity impact ionization avalanche in p-type diamond | - |
| dc.type | Journal Contribution | - |
| dc.identifier.issue | 20 | - |
| dc.identifier.volume | 99 | - |
| local.format.pages | 3 | - |
| local.bibliographicCitation.jcat | A1 | - |
| dc.description.notes | [Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr | - |
| local.publisher.place | MELVILLE | - |
| local.type.refereed | Refereed | - |
| local.type.specified | Article | - |
| dc.bibliographicCitation.oldjcat | A1 | - |
| dc.identifier.doi | 10.1063/1.3662403 | - |
| dc.identifier.isi | 000297786500028 | - |
| item.fulltext | No Fulltext | - |
| item.contributor | MORTET, Vincent | - |
| item.contributor | Soltani, A. | - |
| item.fullcitation | MORTET, Vincent & Soltani, A. (2011) Impurity impact ionization avalanche in p-type diamond. In: APPLIED PHYSICS LETTERS, 99(20). | - |
| item.accessRights | Closed Access | - |
| item.validation | ecoom 2012 | - |
| crisitem.journal.issn | 0003-6951 | - |
| crisitem.journal.eissn | 1077-3118 | - |
| Appears in Collections: | Research publications | |
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