Impurity impact ionization avalanche in p-type diamond

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13012

Title:	Impurity impact ionization avalanche in p-type diamond
Authors:	MORTET, Vincent Soltani, A.
Issue Date:	2011
Publisher:	AMER INST PHYSICS
Source:	APPLIED PHYSICS LETTERS, 99(20)
Abstract:	Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature. (C) 2011 American Institute of Physics.
Notes:	[Mortet, V.] CNRS, LAAS, F-31077 Toulouse, France. [Mortet, V.] Univ Toulouse, UPS, INSA, INP,ISAE,UTI,UTM,LAAS, F-31077 Toulouse, France. [Mortet, V.] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium. [Soltani, A.] Univ Lille Nord France, IEMN CNRS 8520, F-59652 Villeneuve Dascq, France. vmortet@laas.fr
Keywords:	Physics; Applied; electrical conduction; low temperatures; germanium; breakdown; silicon; films
Document URI:	http://hdl.handle.net/1942/13012
ISSN:	0003-6951
e-ISSN:	1077-3118
DOI:	10.1063/1.3662403
ISI #:	000297786500028
Category:	A1
Type:	Journal Contribution
Validations:	ecoom 2012
Appears in Collections:	Research publications

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