Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/13218
Title: Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers
Authors: Frigeri, C.
Serényi, Miklós
Khánh, Nguyen Quoc
Csik, Attila
Riesz, Ferenc
Erdélyi, Zoltán
Nasi, Lucia
Boyen, Hans-Gerd 
Issue Date: 2011
Source: Nanoscale Research Letters, 6(1), (ART N° 189)
Abstract: Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.
Document URI: http://hdl.handle.net/1942/13218
ISSN: 1931-7573
e-ISSN: 1556-276X
DOI: 10.1186/1556-276X-6-189
ISI #: 000290525700087
Category: A1
Type: Journal Contribution
Validations: ecoom 2012
Appears in Collections:Research publications

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