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http://hdl.handle.net/1942/13218
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DC Field | Value | Language |
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dc.contributor.author | Frigeri, C. | - |
dc.contributor.author | Serényi, Miklós | - |
dc.contributor.author | Khánh, Nguyen Quoc | - |
dc.contributor.author | Csik, Attila | - |
dc.contributor.author | Riesz, Ferenc | - |
dc.contributor.author | Erdélyi, Zoltán | - |
dc.contributor.author | Nasi, Lucia | - |
dc.contributor.author | BOYEN, Hans-Gerd | - |
dc.date.accessioned | 2012-02-28T08:16:04Z | - |
dc.date.available | 2012-02-28T08:16:04Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Nanoscale Research Letters, 6(1), (ART N° 189) | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.uri | http://hdl.handle.net/1942/13218 | - |
dc.description.abstract | Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers. | - |
dc.description.sponsorship | This study was supported by the Scientific Cooperation Agreement between MTA (Hungary) and CNR (Italy) under the contract MTA 1102, as well as by OTKA grant Nos. K-67969, CK-80126, K 68534 and TAMOP 4.2.1-08/1- 2008- 003 project (implemented through the New Hungary Development Plan cofinanced by the European Social Fund, and the European Regional Development Fund). Z. Erdélyi is a grantee of the ‘Bolyai János’ scholarship | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.rights | 2011 Frigeri et al; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | - |
dc.title | Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers | - |
dc.type | Journal Contribution | - |
dc.identifier.issue | 1 | - |
dc.identifier.volume | 6 | - |
local.format.pages | 6 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | ONE NEW YORK PLAZA, SUITE 4600 , NEW YORK, NY 10004, UNITED STATES | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
local.bibliographicCitation.artnr | 189 | - |
dc.identifier.doi | 10.1186/1556-276X-6-189 | - |
dc.identifier.isi | 000290525700087 | - |
local.uhasselt.international | yes | - |
item.contributor | Frigeri, C. | - |
item.contributor | Serényi, Miklós | - |
item.contributor | Khánh, Nguyen Quoc | - |
item.contributor | Csik, Attila | - |
item.contributor | Riesz, Ferenc | - |
item.contributor | Erdélyi, Zoltán | - |
item.contributor | Nasi, Lucia | - |
item.contributor | BOYEN, Hans-Gerd | - |
item.fullcitation | Frigeri, C.; Serényi, Miklós; Khánh, Nguyen Quoc; Csik, Attila; Riesz, Ferenc; Erdélyi, Zoltán; Nasi, Lucia & BOYEN, Hans-Gerd (2011) Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers. In: Nanoscale Research Letters, 6(1), (ART N° 189). | - |
item.fulltext | With Fulltext | - |
item.accessRights | Open Access | - |
item.validation | ecoom 2012 | - |
crisitem.journal.issn | 1931-7573 | - |
crisitem.journal.eissn | 1556-276X | - |
Appears in Collections: | Research publications |
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File | Description | Size | Format | |
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Relationship between structural changes.pdf | Published version | 942.64 kB | Adobe PDF | View/Open |
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