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Title: | Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers | Authors: | Frigeri, C. Serényi, Miklós Khánh, Nguyen Quoc Csik, Attila Riesz, Ferenc Erdélyi, Zoltán Nasi, Lucia BOYEN, Hans-Gerd |
Issue Date: | 2011 | Publisher: | SPRINGER | Source: | Nanoscale Research Letters, 6(1), (ART N° 189) | Abstract: | Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers. | Document URI: | http://hdl.handle.net/1942/13218 | ISSN: | 1931-7573 | e-ISSN: | 1556-276X | DOI: | 10.1186/1556-276X-6-189 | ISI #: | 000290525700087 | Rights: | 2011 Frigeri et al; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2012 |
Appears in Collections: | Research publications |
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Relationship between structural changes.pdf | Published version | 942.64 kB | Adobe PDF | View/Open |
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