Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/1386
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dc.contributor.authorVan Elshocht, S.-
dc.contributor.authorHARDY, An-
dc.contributor.authorDe Gendt, S.-
dc.contributor.authorAdelmann, D.-
dc.contributor.authorBrunco, D.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorConard, T.-
dc.contributor.authorDelugas, P.-
dc.contributor.authorLehnen, P.-
dc.contributor.authorShamiryan, D.-
dc.contributor.authorVos, R.-
dc.contributor.authorWitters, P.-
dc.contributor.authorZimmerman, P.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.date.accessioned2007-04-19T08:05:02Z-
dc.date.available2007-04-19T08:05:02Z-
dc.date.issued2006-
dc.identifier.citationKar, S. & De Gendt, S. & Houssa, M. & Iwai, H. & Landheer, D. (Ed.) ECS Meeting: vol. 210.-
dc.identifier.urihttp://hdl.handle.net/1942/1386-
dc.description.abstractThe semiconductor industry is facing the challenging task of finding a candidate to replace silicon oxide, which has been the CMOS gate dielectric of choice for more than 50 years. A material with a dielectric constant (k) higher than SiO2 will allow making the dielectric thicker by a factor of k/k(SiO2), hence lowering the gate current leakage levels, and this without reduction of the capacitance and thus performance.-
dc.format.extent85747 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.titleAlternative gate dielectric materials-
dc.typeProceedings Paper-
dc.bibliographicCitation.bvolume210-
local.bibliographicCitation.authorsKar, S.-
local.bibliographicCitation.authorsDe Gendt, S.-
local.bibliographicCitation.authorsHoussa, M.-
local.bibliographicCitation.authorsIwai, H.-
local.bibliographicCitation.authorsLandheer, D.-
local.bibliographicCitation.conferencedate2006-
local.bibliographicCitation.conferencenameECS Meeting-
dc.bibliographicCitation.conferencenr210-
local.bibliographicCitation.conferenceplaceCancun, Mexico-
local.bibliographicCitation.jcatC2-
local.type.specifiedProceedings Paper-
dc.bibliographicCitation.oldjcatC2-
local.bibliographicCitation.btitleECS Meeting-
item.fulltextWith Fulltext-
item.contributorVan Elshocht, S.-
item.contributorHARDY, An-
item.contributorDe Gendt, S.-
item.contributorAdelmann, D.-
item.contributorBrunco, D.-
item.contributorCaymax, M.-
item.contributorConard, T.-
item.contributorDelugas, P.-
item.contributorLehnen, P.-
item.contributorShamiryan, D.-
item.contributorVos, R.-
item.contributorWitters, P.-
item.contributorZimmerman, P.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.fullcitationVan Elshocht, S.; HARDY, An; De Gendt, S.; Adelmann, D.; Brunco, D.; Caymax, M.; Conard, T.; Delugas, P.; Lehnen, P.; Shamiryan, D.; Vos, R.; Witters, P.; Zimmerman, P.; MEURIS, Marc & Heyns, M. (2006) Alternative gate dielectric materials. In: Kar, S. & De Gendt, S. & Houssa, M. & Iwai, H. & Landheer, D. (Ed.) ECS Meeting: vol. 210..-
item.accessRightsOpen Access-
Appears in Collections:Research publications
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