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http://hdl.handle.net/1942/1386
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DC Field | Value | Language |
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dc.contributor.author | Van Elshocht, S. | - |
dc.contributor.author | HARDY, An | - |
dc.contributor.author | De Gendt, S. | - |
dc.contributor.author | Adelmann, D. | - |
dc.contributor.author | Brunco, D. | - |
dc.contributor.author | Caymax, M. | - |
dc.contributor.author | Conard, T. | - |
dc.contributor.author | Delugas, P. | - |
dc.contributor.author | Lehnen, P. | - |
dc.contributor.author | Shamiryan, D. | - |
dc.contributor.author | Vos, R. | - |
dc.contributor.author | Witters, P. | - |
dc.contributor.author | Zimmerman, P. | - |
dc.contributor.author | MEURIS, Marc | - |
dc.contributor.author | Heyns, M. | - |
dc.date.accessioned | 2007-04-19T08:05:02Z | - |
dc.date.available | 2007-04-19T08:05:02Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Kar, S. & De Gendt, S. & Houssa, M. & Iwai, H. & Landheer, D. (Ed.) ECS Meeting: vol. 210. | - |
dc.identifier.uri | http://hdl.handle.net/1942/1386 | - |
dc.description.abstract | The semiconductor industry is facing the challenging task of finding a candidate to replace silicon oxide, which has been the CMOS gate dielectric of choice for more than 50 years. A material with a dielectric constant (k) higher than SiO2 will allow making the dielectric thicker by a factor of k/k(SiO2), hence lowering the gate current leakage levels, and this without reduction of the capacitance and thus performance. | - |
dc.format.extent | 85747 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | - |
dc.title | Alternative gate dielectric materials | - |
dc.type | Proceedings Paper | - |
dc.bibliographicCitation.bvolume | 210 | - |
local.bibliographicCitation.authors | Kar, S. | - |
local.bibliographicCitation.authors | De Gendt, S. | - |
local.bibliographicCitation.authors | Houssa, M. | - |
local.bibliographicCitation.authors | Iwai, H. | - |
local.bibliographicCitation.authors | Landheer, D. | - |
local.bibliographicCitation.conferencedate | 2006 | - |
local.bibliographicCitation.conferencename | ECS Meeting | - |
dc.bibliographicCitation.conferencenr | 210 | - |
local.bibliographicCitation.conferenceplace | Cancun, Mexico | - |
local.bibliographicCitation.jcat | C2 | - |
local.type.specified | Proceedings Paper | - |
dc.bibliographicCitation.oldjcat | C2 | - |
local.bibliographicCitation.btitle | ECS Meeting | - |
item.fullcitation | Van Elshocht, S.; HARDY, An; De Gendt, S.; Adelmann, D.; Brunco, D.; Caymax, M.; Conard, T.; Delugas, P.; Lehnen, P.; Shamiryan, D.; Vos, R.; Witters, P.; Zimmerman, P.; MEURIS, Marc & Heyns, M. (2006) Alternative gate dielectric materials. In: Kar, S. & De Gendt, S. & Houssa, M. & Iwai, H. & Landheer, D. (Ed.) ECS Meeting: vol. 210.. | - |
item.contributor | Van Elshocht, S. | - |
item.contributor | HARDY, An | - |
item.contributor | De Gendt, S. | - |
item.contributor | Adelmann, D. | - |
item.contributor | Brunco, D. | - |
item.contributor | Caymax, M. | - |
item.contributor | Conard, T. | - |
item.contributor | Delugas, P. | - |
item.contributor | Lehnen, P. | - |
item.contributor | Shamiryan, D. | - |
item.contributor | Vos, R. | - |
item.contributor | Witters, P. | - |
item.contributor | Zimmerman, P. | - |
item.contributor | MEURIS, Marc | - |
item.contributor | Heyns, M. | - |
item.accessRights | Open Access | - |
item.fulltext | With Fulltext | - |
Appears in Collections: | Research publications |
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alternative.pdf | Published version | 83.74 kB | Adobe PDF | View/Open |
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